DC1575A Linear Technology, DC1575A Datasheet - Page 3

• Manufacturer Part Number: DC1575A
• Description: LTC4362-1/LTC4362-2 Overvoltage/Overcurrent Protector With LatchOff/Auto-Retry
• Manufacturer: Linear Technology
• Series: -r

Specifications of DC1575A

• Design Resources: DC1575A Schematic DC1575 Design Files
• Main Purpose: Overvoltage/Overcurrent Protection
• Embedded: No
• Utilized Ic / Part: LTC4362-2
• Primary Attributes: -
• Secondary Attributes: -
• Kit Application Type: Power Management
• Application Sub Type: Overvoltage Protection
• Features: Demonstrates Two Protection Schemes Selected At JP2, Provides Connection For USB Protection
• Lead Free Status / Rohs Status: Not applicable / Not applicable

ELECTRICAL CHARACTERISTICS
SYMBOL
Supplies
V
V
I
Thresholds
V
ΔV
Input Pins
V
I
Output Pins
V
I
V
R
V
R
Internal N-Channel MOSFET
R
I
I
E
Delay
t
t
t
t
t
t
ESD Protection
temperature range, otherwise specifi cations are at T
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specifi ed.
IN
ON
OUT
TRIP
AS
ON
OFF(OV)
OFF(OC)
PWRGD(LH)
PWRGD(HL)
ON(OFF)
AS
IN
IN(UVL)
IN(OV)
ON(TH)
OUT(UP)
GATEP(CLP)
PWRGD(OL)
GATEP
PWRGD
ON
OV
PARAMETER
Input Voltage Range
Input Undervoltage Lockout
Input Supply Current
IN Pin Overvoltage Threshold
Overvoltage Hysteresis
ON Input Threshold
ON Pull-Down Current
OUT Turn-On Ramp-Rate
OUT Leakage Current
IN to GATEP Clamp Voltage
GATEP Pull-Down Resistance
PWRGD Output Low Voltage
PWRGD Pull-Up Resistance to OUT
On Resistance
Overcurrent Threshold
Peak Avalanche Current
Single Pulse Avalanche Energy
Turn-On Delay
Turn-Off Delay for Overvoltage
Turn-Off Delay for Overcurrent
PWRGD Rising Delay
PWRGD Falling Delay
ON High to N-channel MOSFET Off
ESD Protection for IN to GND
CONDITIONS
V
V
V
V
V
V
V
V
V
V
V
I
L = 0.1mH (Note 5)
I
V
V
I
V
V
R
V
C
OUT
AS
OUT
IN
ON
ON
IN
ON
OUT
ON
IN
GATEP
IN
IN
IN
IN
IN
IN
ON
OUT
OUT
A
= 10A, L = 0.1mH (Note 5)
Rising
Rising
= 8V to 28V
= 5V, I
= 6.5V, V
High to V
= 5V
= 5V
= 0V
= 25°C. V
= 0V
= 2.5V
= 2.5V
= 2.5V, V
= 0V
= 0.5A
= 0.5A
= 0.5V to 4V
= 1μF , Human Body Model
= 1kΩ
= 3V
The
PWRGD
6.5V to V
6.5V to PWRGD High
5V, V
PWRGD
2.5V
OUT
OUT
l
IN
3A to V
denotes the specifi cations which apply over the full operating
= 3mA
OUT
= 0.5V, R
= 5V, V
= 5V
= 1V
= 0.5V to PWRGD Low,
OUT
Note 3: The minimum drain-source breakdown voltage of the internal
MOSFET is 28V. Driving the IN and SENSE pins more than 28V above OUT
may damage the device if the E
Note 4: An internal current sense resistor ties IN and SENSE. Driving
SENSE relative to IN may damage the resistor.
Note 5: The I
are not production tested.
OUT
ON
= 4.5V, R
OUT
= 4.5V
= 0V unless otherwise noted.
= 1kΩ
OUT
AS
and E
LTC4362-1/LTC4362-2
= 1kΩ
AS
typical values are based on characterization and
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
AS
capability of the MOSFET is exceeded.
5.684
MIN
250
2.5
1.8
0.4
2.5
1.5
0.8
1.2
25
50
25
5
5
0.23
0.45
TYP
220
100
500
130
±25
2.1
1.5
5.8
5.8
1.5
0.3
40
10
10
10
65
40
5
3
0
2
5.916
MAX
2.45
400
200
800
200
100
100
1.5
4.5
7.5
3.2
0.4
1.8
28
10
10
±3
70
20
1
1
436212fa
UNITS
V/ms
3
MΩ
mΩ
mV
mJ
ms
ms
kΩ
μA
μA
μA
μA
μs
μs
μs
μs
kV
V
V
V
V
V
V
A
A