MT41J64M16JT-15E:G Micron Technology Inc, MT41J64M16JT-15E:G Datasheet - Page 90

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MT41J64M16JT-15E:G

Manufacturer Part Number
MT41J64M16JT-15E:G
Description
MICMT41J64M16JT-15E:G DDR3 SDRAM 64MB X1
Manufacturer
Micron Technology Inc
Series
-r
Type
DDR3 SDRAMr

Specifications of MT41J64M16JT-15E:G

Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-TFBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
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Part Number:
MT41J64M16JT-15E:G
0
Part Number:
MT41J64M16JT-15E:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 42: Tangent Line for
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
V
V
V
V
IL
IL
IH
IH
(
(
DC
AC
(
(
AC
DC
V
Notes:
) MAX
) MAX
REF
) MIN
) MIN
DQS#
V
DQS
DD
CK#
(
V
DC
CK
Q
SS
)
1. Both the clock and the strobe are drawn on different time scales.
DC to V
DC to V
region
region
t
DH (DQ – Strobe)
REF
REF
Hold slew rate
Hold slew rate
falling signal
rising signal
t DS
Tangent
line
t DH
=
=
90
ΔTR
Tangent line (V
Tangent line (V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Nominal
REF
IH
ΔTR
ΔTF
line
1Gb: x4, x8, x16 DDR3 SDRAM
[
DC
[
DC
Tangent
] MIN - V
t DS
] - V
line
IL
[
DC
] MAX)
REF
t DH
[
DC
])
©2006 Micron Technology, Inc. All rights reserved.
ΔTF
Speed Bin Tables
Nominal
line

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