PTFB213004F V1 R250 Infineon Technologies, PTFB213004F V1 R250 Datasheet - Page 5

• Manufacturer Part Number: PTFB213004F V1 R250
• Description: RF MOSFET Power Hi-Power RF LDMOS 300W 2110-2170MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB213004F V1 R250

• Lead Free Status / Rohs Status: No
• Other names: FB213004FV1R25NT

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-15
-25
-35
-45
-55
-65
-75
20
15
10
5
0
36
39
Output PAR Compression (PARC)
Gain
V
Two-tone IMD vs. Output Power
PARC @ .01% CCDF
single-carrier 3GPP WCDMA signal,
DD
input PAR = 7.5 dB, 3.84 MHz BW
40
= 30 V, I
ƒ
1
43
= 2170 MHz, ƒ
Output Power, avg. (dBm)
Output Power, Avg. (dBm)
V
DD
= 30 V, I
DQ
44
2170 MHz
= 2.4 A, ƒ = 2170 MHz,
47
(cont.)
ACP
DQ
Efficiency
2
48
= 2169 MHz
= 2.4 A,
3rd Order
51
52
5th
7th
,
56
55
60
40
20
0
-20
-40
-60
-80
5 of 16
-15
-25
-35
-45
-55
-65
20
15
10
5
0
36
0
Output PAR Compression (PARC)
PARC @ .01% CCDF
V
V
Gain
DD
single-carrier 3GPP WCDMA signal,
DD
10
Intermodulation Distortion vs.
input PAR = 7.5 dB, 3.84 MHz BW
IM7
IM3
IM5
= 30 V, I
= 30 V, I
40
Output Power, avg. (dBm)
20
P
Tone Spacing (MHz)
O UT
Tone Spacing
DQ
DQ
30
2140 MHz
44
= 251 W (PEP)
= 2.4 A, ƒ = 2140 MHz,
= 2.4 A, ƒ = 2140 MHz,
40
ACP
Efficiency
48
50
PTFB213004F
Rev. 05.2, 2010-12-09
60
52
70
,
80
56
0
60
40
20
-20
-40
-60
-80