PTFB213004F V1 R250 Infineon Technologies, PTFB213004F V1 R250 Datasheet

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PTFB213004F V1 R250

Manufacturer Part Number
PTFB213004F V1 R250
Description
RF MOSFET Power Hi-Power RF LDMOS 300W 2110-2170MHz
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB213004F V1 R250

Lead Free Status / Rohs Status
No
Other names
FB213004FV1R25NT
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
300 W, 2110 – 2170 MHz
Description
The PTFB213004F is a 300-watt LDMOS FET designed for class
AB operation in cellular amplifiers covering the 2110 to 2170 MHz
frequency band. Features include high peak power, input and
output match, and a thermally-enhanced, open-cavity earless ceramic
package.
RF Characteristics
Two-carrier WCDMA Measurements
V
ƒ
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
1
DD
= 2167.5 MHz, ƒ
= 30 V, I
-10
-20
-30
-40
-50
-60
34
DQ
= 2.4 A, P
ACP low
V
Single-carrier WCDMA Drive-up
3GPP WCDMA signal, PAR = 7.5 dB,
DD
2
38
= 2172.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
= 30 V, I
CASE
Output Power, avg. (dBm)
3.84 MHz bandwidth
OUT
= 25°C unless otherwise indicated
DQ
42
Efficiency
= 60 W average,
= 2.4 A, ƒ = 2170 MHz,
46
ACP up
(tested in Infineon test fixture)
50
54
50
40
30
20
10
0
1 of 16
Symbol
PTFB213004F
Package H-37275-6/2
Features
G
IMD
h
Broadband internal matching
Enhanced for use in DPD error correction systems
Wide video bandwidth
Typical single-carrier WCDMA performance at
2170 MHz, 30 V
- P
- Gain = 17.5 dB
- Efficiency = 30%
Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 300 W
(CW) output power
Excellent thermal stability
Integrated ESD protection
Pb-free and RoHS-compliant
ps
D
OUT
= 49.5 dBm Avg
Min
17
25
Typ
26.5
–36
18
PTFB213004F
Rev. 05.2, 2010-12-09
Max
–33
Unit
dBc
dB
%

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PTFB213004F V1 R250 Summary of contents

Page 1

Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency ...

Page 2

Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design / characterization in Infineon test fixture 2 250 W PEP, ƒ = 2140 MHz, tone ...

Page 3

Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA Drive- 2.4 A, 3GPP WCDMA signal PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW ...

Page 4

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive- ƒ = 2170 MHz, ƒ -20 -30 -40 IMD 3 -50 -60 - Output Power, PEP (dBm) Two-tone Drive-up ...

Page 5

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone IMD vs. Output Power ƒ = 2170 MHz, ƒ -15 -25 -35 -45 -55 -65 - Output Power, Avg. (dBm) ...

Page 6

Confidential, Limited Internal Distribution Typical Performance (cont.) Output PAR Compression (PARC) 2110 MHz 2.4 A, ƒ = 2110 MHz single-carrier 3GPP WCDMA signal, input PAR = 7.5 dB, 3.84 MHz BW 20 ...

Page 7

Confidential, Limited Internal Distribution Reference Circuit (cont.) TL133 TL147 TL134 TL140 TL153 TL115 2 TL160 3 1 TL163 TL136 2 TL141 3 1 TL102 C103 8.2 pF TL108 TL157 TL155 TL156 C104 ...

Page 8

Confidential, Limited Internal Distribution Reference Circuit (cont.) TL241 2 TL218 3 1 TL236 TL228 2 TL235 3 1 TL221 TL222 1 TL237 3 2 TL223 V DD TL207 TL204 DRAIN DUT V DD TL227 TL225 1 TL238 3 2 TL224 ...

Page 9

Confidential, Limited Internal Distribution Reference Circuit (cont.) Description PTFB213004F DUT LTN/PTFB213004EF PCB Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Input TL101 0.004 λ, 51.98 W 0.010 λ, 28.85 W TL101 TL102 0.207 λ, 63.89 W TL103 0.006 λ, ...

Page 10

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Input TL152 0.070 λ, 8.03 W 0.018 λ, 63.89 W TL153 TL154 0.016 λ, 17.20 W TL155 0.060 λ, 49.69 W 0.002 λ, 49.69 ...

Page 11

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Output TL201 (taper) 0.018 λ, 5. 9.59 W 0.016 λ, 9. 34.72 W TL202 (taper) TL203 (taper) 0.026 λ, 3.67 ...

Page 12

Confidential, Limited Internal Distribution Reference Circuit (cont.) RO4350, .020 C803 C801 R805 S1 R801 S3 R803 R106 C109 C111 C112 C113 C106 C103 RF IN C104 C105 C114 C102 C101 C110 R107 Reference circuit assembly diagram (not to scale)* *Gerber ...

Page 13

Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information Component Description Input C101, C108, C111 Chip capacitor, 0.1 μF C102, C112 Chip capacitor, 4.7 μF C103 Chip capacitor, 8.2 pF C104 Chip capacitor, 0.7 pF C105, C106 Chip capacitor, ...

Page 14

Confidential, Limited Internal Distribution Pinout Diagram See next page for package outline specifications Data Sheet V2 Pin Description G1, G2 Gate D1, D2 Drain V1 flange DD S Source (flange) 14 ...

Page 15

Confidential, Limited Internal Distribution Package Outline Specifications 2X 45° X 1.19 [45° X .047 30° 9.398 [.370] +.381 4X R0.508 -.127 [ ] R.020 +.015 -.005 2.134 [.084] SPH 1.626 [0.064] Diagram Notes—unless otherwise specified: 1. Interpret dimensions ...

Page 16

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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