PTFB183404F V2 R250 Infineon Technologies, PTFB183404F V2 R250 Datasheet - Page 3

• Manufacturer Part Number: PTFB183404F V2 R250
• Description: RF MOSFET Power RF LDMOS FETs 340W 1805-1880 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB183404F V2 R250

• Lead Free Status / Rohs Status: No
• Other names: FB183404FV2R25NT

Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
Ordering Information
Type and Version
PTFB183404E V1
PTFB183404E V1 R250 H-36275-8
PTFB183404F V2
PTFB183404F V2 R250 H-37275-6/2
Typical Performance
Data Sheet
-25
-30
-35
-40
-45
-50
-55
36
Two-carrier WCDMA 3GPP Drive-up
V
38
DD
PAR = 8:1, 10 MHz carrier spacing,
= 30 V, I
Average Output Power (dBm)
40
1880 Lower
1880 Upper
1842.5 Lower
1842.5 Upper
1805 Lower
1805 Upper
CASE
42
BW = 3.84 MHz
Package Outline
H-36275-8
H-37275-6/2
DQ
= 70°C, 340 W CW)
= 2.6 A, 3GPP WCDMA,
44
(data taken in a production test fixture)
46
48
50
52
Package Description
Ceramic open-cavity, slotted push-pull
Ceramic open-cavity, slotted push-pull
Ceramic open-cavity, earless push-pull
Ceramic open-cavity, earless push-pull
3 of 18
Symbol
19
18
17
16
15
V
T
R
V
DSS
STG
36
T
qJC
GS
J
V
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
DD
38
Gain
= 30 V, I
Two-carrier WCDMA 3GPP
Average Output Power (dBm)
40
Efficiency
DQ
42
BW = 3.84MHz
= 2.6 A, ƒ = 1880 MHz, 3GPP
–40 to +150
–6 to +10
Value
44
200
0.2
65
46
PTFB183404E
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
PTFB183404F
48
Rev. 04, 2010-11-17
50
52
°C/W
Unit
40
30
20
10
0
°C
°C
V
V