PTFB183404F V2 R250 Infineon Technologies, PTFB183404F V2 R250 Datasheet

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PTFB183404F V2 R250

Manufacturer Part Number
PTFB183404F V2 R250
Description
RF MOSFET Power RF LDMOS FETs 340W 1805-1880 MHz
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB183404F V2 R250

Lead Free Status / Rohs Status
No
Other names
FB183404FV2R25NT
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistors
340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced package with
slotted and earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal performance
and superior reliability.
RF Characteristics
Two-carrier WCDMA Measurements
V
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DD
= 30 V, I
-25
-30
-35
-40
-45
-50
-55
-60
36
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
V
IMD Up
DQ
Two-carrier WCDMA 3GPP Drive-up
DD
38
= 2.6 A, P
= 30 V, I
Average Output Power (dBm)
40
CASE
IMD
DQ
42
BW = 3.84 MHz
OUT
= 2.6A, ƒ = 1880 MHz, 3GPP
Low
= 25°C unless otherwise indicated
Efficiency
44
= 80 W average, ƒ
46
ACPR
48
(tested in Infineon test fixture)
50
1
52
= 1870 MHz, ƒ
35
30
25
20
15
10
5
0
1 of 18
2
= 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
Symbol
PTFB183404E
Package H-36275-8
PTFB183404F
Package H-37275-6/2
Features
G
h
IMD
Broadband internal input and output matching
Wide video bandwidth
Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant
ps
D
Min
16
24
Typ
25.5
–35
17
PTFB183404E
PTFB183404F
Rev. 04, 2010-11-17
Max
–32
Unit
dBc
dB
%

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PTFB183404F V2 R250 Summary of contents

Page 1

Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 ...

Page 2

Confidential, Limited Internal Distribution RF Characteristics (cont.) Single-carrier WCDMA Performance fixture 2 clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7 0.01% CCDF probability DD DQ Characteristic Gain ...

Page 3

... W CW) CASE Ordering Information Type and Version Package Outline PTFB183404E V1 H-36275-8 PTFB183404E V1 R250 H-36275-8 PTFB183404F V2 H-37275-6/2 PTFB183404F V2 R250 H-37275-6/2 Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive- 2.6 A, 3GPP WCDMA PAR = 8:1, 10 MHz carrier spacing ...

Page 4

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency 2 Efficiency 40 30 IMD3 20 10 1730 1767.5 1805 1842.5 ...

Page 5

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies 2.6 A, tone spacing = 1 MHz DD DQ -20 1880MHz 1842.5MHz -30 1805MHz -40 -50 - ...

Page 6

Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier Broadband Performance 2 Efficiency Gain PARC 5 0 ACP -5 1693 1768 1843 Frequency (MHz) ...

Page 7

Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Source W Frequency MHz R 1730 1.86 –4.25 1768 1.77 –4.06 1805 1.68 –3.88 1843 1.61 –3.70 1880 1.56 –3.53 1918 1.51 –3.37 1955 1.47 –3.22 See next ...

Page 8

Confidential, Limited Internal Distribution Reference Circuit TL141 TL151 TL160 TL101 2 TL142 3 1 TL158 C102 TL159 100000 pF 2 TL163 3 1 TL102 C110 TL103 4700000 pF TL143 TL104 C104 10 pF TL145 TL114 TL113 TL111 ...

Page 9

Confidential, Limited Internal Distribution Reference Circuit (cont.) C 202 10000000 pF TL233 2 TL224 3 1 TL203 C214 1000000 pF 1 TL204 3 2 TL205 C205 2200000 pF 1 TL234 3 2 TL229 V DD TL206 TL210 TL207 DRAIN DUT ...

Page 10

Confidential, Limited Internal Distribution Reference Circuit (cont.) Description PTFB183404E or PTFB183404F DUT 0.508 mm [.020"] thick, PCB Electrical Characteristics at 1880 MHz Transmission Electrical Line Characteristics Input TL101, TL129 0.017 λ, 54.17 W TL102 0.002 λ, 63.89 W 0.000 λ, ...

Page 11

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Line Characteristics Input TL148 TL149 TL150 TL151 TL152 TL153 0.008 λ, 28.85 W 0.006 λ, 17.20 W TL154, TL155 0.015 λ, 63.89 W TL158 TL160 0.004 ...

Page 12

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Line Characteristics Output TL201 (taper) 0.011 λ, 12. 34.72 W 0.009 λ, 5. 7.95 W TL202 (taper) TL203 0.019 λ, 20.93 W ...

Page 13

Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information LTN/PTFB183404EF Test Fixture Part No. Find Gerber files for this test fixture on the Infineon Web site at RO4350, .020 C803 C801 R805 S1 S3 R801 R804 R102 C111 C102 ...

Page 14

Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Input C101, C110 Chip capacitor, 4.7 μF C102, C105 Chip capacitor, 0.1 μF C103 Chip capacitor, 0.7 pF C104, C108, C109 Chip capacitor C106, C107 Chip capacitor, 1.7 pF ...

Page 15

Confidential, Limited Internal Distribution Pinout Diagram TOP VIEW TOP VIEW Data Sheet flange PTFB183404E PTFB183404F Pin ...

Page 16

Confidential, Limited Internal Distribution Package Outline Specifications 2X 45° X 1.19 [45° X .047] 4X 30° 2X R1.587 [R.062] 9.398 [.370] E +0.127 R0.508 –0.508 +. 005 [R.020 ] –. 020 2.134 [.084] SPH 1.626 [.064] Diagram Notes—unless otherwise specified: ...

Page 17

Confidential, Limited Internal Distribution Package Outline Specifications 2X 45° X 1.19 [45° X .047 30° 9.398 [.370] +.381 4X R0.508 -.127 [ ] R.020 +.015 -.005 2.134 [.084] SPH 1.626 [0.064] Diagram Notes—unless otherwise specified: 1. Interpret dimensions ...

Page 18

... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

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