CFY 25-20P (H) Infineon Technologies, CFY 25-20P (H) Datasheet - Page 3

• Manufacturer Part Number: CFY 25-20P (H)
• Description: RF GaAs HiRel X-Band GaAs Gen Purpose MESFET
• Manufacturer: Infineon Technologies

Specifications of CFY 25-20P (H)

• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to + 0.5 V
• Continuous Drain Current: 80 mA
• Mounting Style: SMD/SMT
• Package / Case: Micro-X
• Configuration: Single Dual Source
• Lead Free Status / Rohs Status: No
• Other names: CFY2520PHNZ

1
(fixed generic matching, no fine-tuning).
2
(fixed generic matching, no fine- tuning).
Electrical Characteristics
Parameter
AC Characteristics
Linear power gain
V
P
CFY25-20
CFY25-23
CFY25-20P, -P
CFY25-23P
Noise figure
V
CFY25-P
CFY25-20, -20P
CFY25-23. -23P
Associated gain
V
CFY25-P
CFY25-20, -20P
CFY25-23, -23P
Output power at 1 dB gain compression
V
CFY25-20, -23
CFY25-20, -23P, -P
Outout power/ linear power gain characteristics given for optimum output power machting conditions
Noise figure / associated gain characterisitcs given for minimum noise figure matching conditions
DS
IN
DS
DS
DS
= 0 dBm
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
D
2)
D
D
D(RFoff)
= 20 mA, f = 12 GHz,
= 15 mA, f = 12 GHz
= 15 mA, f = 12 GHz
2)
1)
= 20 mA, f = 12 GHz
1)
3
Symbol
G
NF
G
P
1dB
lp
a
min.
8.5
8.5
14
8
8
-
-
-
-
-
-
-
Values
< 2.3
>8.5
typ.
1.9
2.2
9.2
8.5
9.2
8.5
8.7
15
15
9
max.
2.1
2.4
2007-08-08
-
-
-
-
-
-
-
-
-
-
CFY25...
Unit
dB
dBm