CFY 25-20P (H) Infineon Technologies, CFY 25-20P (H) Datasheet - Page 2

• Manufacturer Part Number: CFY 25-20P (H)
• Description: RF GaAs HiRel X-Band GaAs Gen Purpose MESFET
• Manufacturer: Infineon Technologies

Specifications of CFY 25-20P (H)

• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to + 0.5 V
• Continuous Drain Current: 80 mA
• Mounting Style: SMD/SMT
• Package / Case: Micro-X
• Configuration: Single Dual Source
• Lead Free Status / Rohs Status: No
• Other names: CFY2520PHNZ

1
2
3
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse/ forward)
Drain current
Gate forward current
RF input power, C- and X-band
Junction temperature
Storage temperature
Total power dissipation
Soldering temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics (at T
Parameter
DC Characteristics
Drain- source saturation current
V
Gate threshold voltage
V
Drain current pinch-off
V
Gate leakage current at pinch-off
V
Transconductance
V
Gate leakage current at operation
V
Thermal resistance junction to soldering point
For V
At T
During 15 sec. maximum. Tthe same terminal shall not be resoldered until 3 minutes have elapsed.
DS
DS
DS
DS
DS
DS
s =
= 3 V, V
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, I
= 3 V, I
DS
+72.5 °C. For T
V. For V
D
D
D
GS
GS
GS
= 1 mA
= 15 mA
= 15 mA
= 0 V
= -4 V
= -4 V
DS > 3 V, derating is required.
s
> +72.5 °C derating is required.
3)
2)
1)
A
= 25 °C; unless otherwise specified)
2
Symbol
R
Symbol
V
V
V
I
I
P
T
T
P
T
Symbol
I
-V
I
-I
g
-I
R
D
G
DSS
Dp
j
stg
sol
DS
DG
GS
RF,in
tot
m15
thJS
Gp
G15
thJS
Gth
min.
0.3
15
35
-
-
-
-
-65...175
-5...0.5
Values
Value
Value
< 100
< 100
175
250
230
1.5
typ.
370
410
< 1
80
17
30
40
5
7
1
max.
200
60
3
2
2007-08-08
-
-
-
CFY25...
Unit
K/W
Unit
V
mA
dBm
°C
mW
°C
Unit
mA
V
µA
mS
µA
K/W