BFY405 (P) Infineon Technologies, BFY405 (P) Datasheet - Page 2
BFY405 (P)
Manufacturer Part Number
BFY405 (P)
Description
RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet
1.BFY405_P.pdf
(4 pages)
Specifications of BFY405 (P)
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
22000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
12 mA
Power Dissipation
55 mW
Maximum Operating Temperature
+ 175 C
Package / Case
Micro-X
Dc Collector/base Gain Hfe Min
50 at 5 mA at 1 V
Gain Bandwidth Product Ft
22 GHz
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package
Micro-X
Comment
also available in (S) and (H) quality
Vceo (max)
4.5 V
Ic(max)
12.0 mA
Ptot (max)
55.0 mW
Lead Free Status / Rohs Status
No
Other names
BFY405PNZ
Maximum Ratings
Thermal Resistance
Notes.:
1) At T
2) T
Electrical Characteristics
at T
Notes:
1.) This Test assures V(BR)
IFAG IMM RDP D HIR
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
Junction temperature
Operating temperature range
Storage temperature range
Junction-soldering point
Parameter
DC Characteristics
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Emitter-base cuttoff current
V
DC current gain
I
C
S
CB
CE
EB
= 5 mA, V
A
S
145°C
=25°C; unless otherwise specified
= 5 V, I
= 4.5 V, I
= 1.5 V, I
is measured on the collector lead at the soldering point to the pcb.
S
= + 145 °C. For T
E
CE
= 0
C
B
1), 2)
= 0.1µA
= 0
= 1 V
2)
S
> + 145 °C derating is required.
CE0
1.)
> 4.5V
Symbol
I
I
I
h
Symbol
V
V
V
I
I
P
T
T
T
R
C
B
CBO
CEX
EBO
FE
CEO
CBO
EBO
tot
j
op
stg
th JS
2 of 4
min.
-
-
-
50
Values
4.5
15
1.5
12
1.0
55
175
-65...+175
-65...+175
<
545
Values
typ.
-
-
-
90
max.
10
20
(t.b.d.)
5.0
150
V2, February 2011
Unit
nA
µA
A
-
BFY405
Unit
V
V
V
mA
mA
mW
C
C
C
K/W