BFY405 (P) Infineon Technologies, BFY405 (P) Datasheet

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BFY405 (P)

Manufacturer Part Number
BFY405 (P)
Description
RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFY405 (P)

Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
22000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
12 mA
Power Dissipation
55 mW
Maximum Operating Temperature
+ 175 C
Package / Case
Micro-X
Dc Collector/base Gain Hfe Min
50 at 5 mA at 1 V
Gain Bandwidth Product Ft
22 GHz
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package
Micro-X
Comment
also available in (S) and (H) quality
Vceo (max)
4.5 V
Ic(max)
12.0 mA
Ptot (max)
55.0 mW
Lead Free Status / Rohs Status
No
Other names
BFY405PNZ
HiRel NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
(ql) Quality Level:
(see order instructions for ordering example)
IFAG IMM RDP D HIR
Type
BFY405 (ql)
HiRel Discrete and Microwave Semiconductor
For Low Current Applications
For Oscillators up to 12 GHz
Noise Figure F = 1.15 dB at 1.8 GHz
Outstanding Gms = 23dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency f T = 20 GHz
SIEGET
Infineon Technologies Grounded Emitter Transistor-
25 GHz f T -Line
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 01
25-Line
Space Qualified
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
Marking
-
Ordering Code
see below
1 of 4
Pin Configuration
1
C
2
4
1
E
3
B
4
E
V2, February 2011
BFY405
Package
Micro-X
3
2

Related parts for BFY405 (P)

BFY405 (P) Summary of contents

Page 1

... Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package  Transition Frequency GHz   SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor- 25 GHz f T -Line  Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 01 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation,  145°C 1 Junction temperature Operating temperature range Storage temperature range Thermal Resistance 2) Junction-soldering point Notes ...

Page 3

Electrical Characteristics (continued) Parameter AC Characteristics Transition frequency I = 10mA 2.0 GHz C CE Collector-base capacitance vbe = MHz CB BE Collector-emitter capacitance ...

Page 4

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...

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