PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 6

• Manufacturer Part Number: PMV22EN
• Description: MOSFET, N CH, 30V, 5.2A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV22EN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.017ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V

NXP Semiconductors
PMV22EN
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
D
16
12
80
60
40
20
8
4
0
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
2
j
j
(1)
= 25 °C
= 25 °C
3 V
GS
GS
GS
GS
GS
GS
4
= 2.5 V
= 2.6 V
= 2.8 V
= 3.0 V
= 4.5 V
= 10 V
4.5 V
(2)
10 V
1
6
8
2
(3)
(4)
(5)
(6)
10
V
GS
2.5 V
2.3 V
= 2.8 V
12
3
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V
I
017aaa155
017aaa157
D
DS
14
(A)
(V)
16
4
Rev. 1 — 30 March 2011
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
10
10
10
10
D
80
60
40
20
–3
–4
–5
–6
0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
2
D
j
= 25 °C; V
= 5.3 A
j
j
= 150 °C
= 25 °C
30 V, 5.2 A N-channel Trench MOSFET
(1)
4
DS
1.0
= 5 V
6
(2)
2.0
(1)
(2)
PMV22EN
(3)
8
V
© NXP B.V. 2011. All rights reserved.
GS
V
017aaa156
017aaa158
GS
(V)
(V)
3.0
10
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