PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 2

• Manufacturer Part Number: PMV22EN
• Description: MOSFET, N CH, 30V, 5.2A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV22EN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.017ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMV22EN
Product data sheet
Pin
1
2
3
Type number
PMV22EN
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Symbol Description
G
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
gate
source
drain
TO-236AB
Package
Name
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
Rev. 1 — 30 March 2011
amb
amb
amb
sp
amb
GS
GS
Simplified outline
= 25 °C
= 10 V; T
= 10 V; T
= 25 °C
= 25 °C; single pulse; t
= 25 °C
= 25 °C
SOT23 (TO-236AB)
1
amb
amb
= 25 °C
= 100 °C
3
2
p
30 V, 5.2 A N-channel Trench MOSFET
≤ 10 µs
Graphic symbol
[1]
[1]
[2]
[1]
[1]
mbb076
G
Min
-
-20
-
-
-
-
-
-
-
-55
-65
-
PMV22EN
© NXP B.V. 2011. All rights reserved.
D
S
2
SOT23
150
150
Version
Max
30
20
5.2
3.3
20
510
930
4170
150
930
.
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
mA
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