BUK9Y58-75B NXP Semiconductors, BUK9Y58-75B Datasheet - Page 6

MOSFET, N CH, 75V, 20.73A, LFPAK

BUK9Y58-75B

Manufacturer Part Number
BUK9Y58-75B
Description
MOSFET, N CH, 75V, 20.73A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9Y58-75B

Transistor Polarity
N Channel
Continuous Drain Current Id
20.73A
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.047ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.65V
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9Y58-75B
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BUK9Y58-75B,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
6. Characteristics
Table 6.
BUK9Y58-75B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
see
V
I
T
V
T
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
S
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C; see
= 10 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 10 A; V
Figure
Figure
Figure
Figure 12
Figure 13
Figure 16
= 75 V; V
= 75 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 4.5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 04 — 7 April 2010
10; see
10; see
10; see
D
D
DS
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs;
D
= 10 A; T
= 10 A; T
GS
GS
L
DS
= 10 A; T
= 60 V; V
= 0 V; T
= V
= V
= V
= 10 A; T
Figure 14
Figure 15
= 3 Ω; V
GS
GS
= +15 V; T
= -15 V; T
= 25 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 11
Figure 11
; T
; T
; T
j
j
j
= 25 °C;
= 175 °C;
= 25 °C;
GS
j
j
j
j
GS
j
j
j
= 175 °C;
= 25 °C;
= -55 °C;
= 25 °C
j
= 25 °C
= 175 °C
= 25 °C
j
= 25 °C
j
j
j
= 5 V;
= 25 °C
= 5 V;
= 25 °C
= -55 °C
= 25 °C
N-channel TrenchMOS logic level FET
BUK9Y58-75B
Min
75
70
0.5
1.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.65
-
-
0.02
2
2
-
-
52
47
10.7
2.3
5
853
106
52
15
16
30
9
0.85
53
122
© NXP B.V. 2010. All rights reserved.
127
-
Max
-
-
-
2.15
2.45
500
1
100
100
61
145
58
53
-
-
-
1137
71
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
6 of 14

Related parts for BUK9Y58-75B