BUK9Y58-75B,115 NXP Semiconductors, BUK9Y58-75B,115 Datasheet

MOSFET N-CH 75V 20.73A LFPAK

BUK9Y58-75B,115

Manufacturer Part Number
BUK9Y58-75B,115
Description
MOSFET N-CH 75V 20.73A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9Y58-75B,115

Input Capacitance (ciss) @ Vds
1137pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
53 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
20.73A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
10.7nC @ 5V
Power - Max
60.4W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5529-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9Y58-75B,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
BUK9Y58-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 7 April 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C
Figure
= 25 °C; see
= 5 V; T
= 5 V; I
= 10 V; I
1; see
D
mb
j
D
≤ 175 °C
= 10 A;
= 10 A;
= 25 °C;
Figure 13
Figure 2
Figure 4
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
solenoid drives
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
52
47
Max Unit
75
20.7
3
60.4 W
58
53
V
A
mΩ
mΩ

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BUK9Y58-75B,115 Summary of contents

Page 1

... BUK9Y58-75B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 14 Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω 20. sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET Min Typ Max - - - 20. 14. 82 60.4 -55 - 175 ...

Page 4

... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac501 (1) (2) ( (ms) AL 03na19 200 T (°C) mb © ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y58-75B Product data sheet = DSon Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET 003aac622 10μ s 100μ s 1ms 10ms 100ms V (V) DS Min Typ Max - - 2.53 003aac483 t p δ ...

Page 6

... Figure Ω Ω °C G(ext ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET Min Typ Max 0 1.25 1. 500 - 0. 100 - 2 100 - - 145 ...

Page 7

... V (V) DS Fig 7. 003aac974 (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET 160 3 3.2 3.6 2.6 DSon 120 Drain-source on-state resistance as a function of drain current; typical values (A) ...

Page 8

... Fig 11. Sub-threshold drain current as a function of 03nq03 R DSON (mΩ) 100 140 180 T (°C) j Fig 13. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET -1 -2 min typ max - ...

Page 9

... G Fig 15. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.6 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET function of drain-source voltage; typical values. 003aac971 = 25 ° 1.4 V (V) SD ...

Page 10

... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 ...

Page 11

... Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET Supersedes BUK9Y58-75B_3 BUK9Y58-75B_2 © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y58-75B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK9Y58-75B ...

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