BUK9Y09-40B NXP Semiconductors, BUK9Y09-40B Datasheet - Page 7
![MOSFET, N CH, 40V, 75A, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
BUK9Y09-40B
Manufacturer Part Number
BUK9Y09-40B
Description
MOSFET, N CH, 40V, 75A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9Y09-40B115.pdf
(14 pages)
Specifications of BUK9Y09-40B
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0058ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.65V
Rohs Compliant
Yes
NXP Semiconductors
BUK9Y09-40B
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
(A)
I
DSon
D
200
150
100
25
20
15
10
50
5
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
10
2.5
2
5
50
3
4
100
3.5
V
6
GS
(V) = 10
V
GS
4
150
4.5
(V) = 2
5
4.5
All information provided in this document is subject to legal disclaimers.
8
003aac865
003aac863
I
V
D
DS
3.5
2.5
(A)
3
4
(V)
200
10
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
V
GS(th)
(V)
g
(S)
fs
80
70
60
50
40
30
2.5
1.5
0.5
2
1
0
-60
drain current; typical values.
junction temperature
Forward transconductance as a function of
Gate-source threshold voltage as a function of
0
N-channel TrenchMOS logic level FET
20
0
max
typ
min
BUK9Y09-40B
40
60
120
60
© NXP B.V. 2010. All rights reserved.
003aac866
003aad557
T
I
D
j
(°C)
(A)
180
80
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