BUK9Y09-40B NXP Semiconductors, BUK9Y09-40B Datasheet - Page 6

MOSFET, N CH, 40V, 75A, LFPAK

BUK9Y09-40B

Manufacturer Part Number
BUK9Y09-40B
Description
MOSFET, N CH, 40V, 75A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9Y09-40B

Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0058ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.65V
Rohs Compliant
Yes
NXP Semiconductors
6. Characteristics
Table 6.
BUK9Y09-40B
Product data sheet
Symbol
Static characteristics
V
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
V
see
V
I
see
V
T
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
S
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Figure
Figure
Figure
Figure
Figure 12
Figure 13
Figure 15
= 40 V; V
= 40 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 30 V
= 5 V; I
= 4.5 V; I
= 5 V; I
= 10 V; I
= 0 V; V
= 10 Ω
Rev. 04 — 7 April 2010
9; see
9; see
9; see
11; see
D
D
DS
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs; V
= 25 A; T
D
= 25 A; T
GS
GS
L
= 25 A; T
= 32 V; V
= 0 V; T
= V
= V
= V
= 25 A; T
Figure 14
= 1.2 Ω; V
GS
GS
= 15 V; T
= -15 V; T
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V; T
Figure 10
Figure 10
Figure 10
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
; T
; T
; T
j
j
j
= 25 °C;
= 25 °C;
= 175 °C;
j
j
j
j
GS
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C
j
= 25 °C
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
= 5 V;
= -55 °C
= 25 °C
= 5 V;
GS
= 0 V;
N-channel TrenchMOS logic level FET
BUK9Y09-40B
Min
36
40
1.25
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.65
-
-
0.02
-
2
2
6.9
-
-
5.8
30
6.5
11
2150
378
194
29
92
97
83
0.85
40
66
© NXP B.V. 2010. All rights reserved.
454
-
Max
-
-
2.15
-
2.45
1
500
100
100
9
10
19
8
-
-
-
2866
266
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
6 of 14

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