UBA2032TS/N2/N,118 NXP Semiconductors, UBA2032TS/N2/N,118 Datasheet - Page 32

• Manufacturer Part Number: UBA2032TS/N2/N,118
• Description: MOSFET & Power Driver ICs Full Bridg Driver IC
• Manufacturer: NXP Semiconductors

Specifications of UBA2032TS/N2/N,118

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 935278859118

NXP Semiconductors
Table 10.
T
positive currents flow in the IC; typical values are given at V
UJA1079_2
Product data sheet
Symbol
Reset output with clamping detection; pin RSTN
I
I
V
V
V
V
Interrupt output; pin INTN
I
Enable output; pin EN
I
I
V
Watchdog off input; pin WDOFF
V
V
R
Wake input; pin WAKE1, WAKE2
V
V
I
I
Limp home output; pin LIMP
I
Wake bias output; pin WBIAS
I
LIN transmit data input; pin TXDL
V
V
OH
OL
OL
OH
OL
pu
pd
O
O
vj
OL
OH
th(sw)
hys(i)
OL
th(sw)
hys(i)
th(sw)
hys(i)
th(sw)
hys(i)
pupd
=
−
40 °C to +150
Static characteristics
Parameter
HIGH-level output current
LOW-level output current
LOW-level output voltage
HIGH-level output voltage
switching threshold voltage
input hysteresis voltage
LOW-level output current
HIGH-level output current
LOW-level output current
LOW-level output voltage
switching threshold voltage
input hysteresis voltage
pull-up/pull-down resistance
switching threshold voltage
input hysteresis voltage
pull-up current
pull-down current
output current
output current
switching threshold voltage
input hysteresis voltage
°
C; V
BAT
= 4.5 V to 28 V; V
…continued
All information provided in this document is subject to legal disclaimers.
Conditions
V
V
strong; V
V
−40 °C < T
weak; V
V
−40 °C < T
V
pull-up resistor to V
−40 °C < T
V
pull-up resistor to V1 ≥ 900 Ω
−40 °C < T
-40 °C < T
V
V
V
V
V
V
I
V
V
V
V
V
V
T
V
V
V
BAT
OL
vj
RSTN
V1
V1
V1
V1
V1
V1
V1
OL
OH
V1
OL
V1
V1
V1
WAKE
WAKE
LIMP
WBIAS
V1
V1
= −40 °C to 200 °C
= 20 μA; V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 1 V to 5.5 V
= 2.975 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
= 2.97 V to 5.5 V
> V
= 0.4 V
= 0.4 V; V
Rev. 02 — 27 May 2010
= V
= 0.4 V; LHC = 1
= 0.8V
= 0 V for t < t
= V
= 1.4 V
V1
RSTN
V1
RSTN
; R
vj
BAT
vj
vj
vj
vj
− 0. 4 V
< 200 °C
BAT
< 200 °C
< 200 °C
< 200 °C
< 200 °C; V
LIN
= 0.8V
V1
V1
= 0.2V
V1
for t < t
= 500
= 14 V; unless otherwise specified.
= 1.5 V
= 2.97 V to 5.5 V
V1
V1
wake
V1
wake
Ω
≥ 900 Ω
; all voltages are defined with respect to ground;
BAT
< 28 V
Min
−1500
4.9
200
0
0
0.8V
0.3V
100
−20
-
0.3V
100
5
2
100
−2
0
0.8
1
0.3V
100
1.6
1.6
LIN core system basis chip
V1
V1
V1
V1
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
-
-
UJA1079
© NXP B.V. 2010. All rights reserved.
1000
Max
−100
40
540
0.2V
0.5
V
0.3
0.7V
900
15
−1.6
20
0.4
0.7V
900
20
3.75
0
2
8
7
0.7V
900
V1
+
V1
V1
V1
V1
32 of 45
V
Unit
μA
mA
μA
V
V
V
V
mV
mA
mA
mA
V
V
mV
kΩ
mV
μA
μA
mA
mA
V
mV