SI7336ADP-T1-E3/BKN Siliconix / Vishay, SI7336ADP-T1-E3/BKN Datasheet - Page 5

• Manufacturer Part Number: SI7336ADP-T1-E3/BKN
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI7336ADP-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.1
20
10
1
- 50
0.00
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
J
T
Threshold Voltage
0.4
J
= 150 °C
- Temperature (°C)
25
50
0.6
I
D
75
= 250 µA
T
0.8
J
0.01
100
= 25 °C
0.1
10
0.01
100
1
* V
Safe Operating Area, Junction-to-Ambient
1.0
125
GS
Limited by R
> minimum V
V
DS
150
1.2
0.1
- Drain-to-Source Voltage (V)
Single Pulse
T
DS(on)
A
= 25 °C
GS
*
at which R
1
DS(on)
0.20
0.16
0.12
0.08
0.04
0.00
50
40
30
20
10
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
0.01
2
100
V
GS
0.1
- Gate-to-Source Voltage (V)
Time (s)
4
T
J
1
= 125 °C
Vishay Siliconix
6
Si7222DN
T
10
J
= 25 °C
I
www.vishay.com
D
= 5.7 A
8
100
1000
10
5