SI7336ADP-T1-E3/BKN Siliconix / Vishay, SI7336ADP-T1-E3/BKN Datasheet

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SI7336ADP-T1-E3/BKN

Manufacturer Part Number
SI7336ADP-T1-E3/BKN
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Siliconix / Vishay
Datasheet
1.SI7336ADP-T1-E3BKN.pdf (8 pages)

Specifications of SI7336ADP-T1-E3/BKN

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
Ordering Information: Si7222DN-T1-E3 (Lead (Pb)-free)
DS
40
(V)
8
D1
3.30 mm
7
D1
0.047 at V
0.042 at V
6
PowerPAK 1212-8
D2
R
5
DS(on)
Si7222DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
GS
GS
(Ω)
1
J
= 4.5 V
= 10 V
= 150 °C)
S1
Dual N-Channel 40 V (D-S) MOSFET
2
G1
Bottom View
3
S2
3.30 mm
4
G2
I
D
6
5
(A)
e
e
c, d
A
= 25 °C, unless otherwise noted
Q
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
8 nC
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• Primary Side Switch
• Synchronus Rectification
G
Symbol
T
1
J
Available
Package with Small Size and Low 1.07 mm
Profile
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
N-Channel MOSFET
D
S
D
stg
D
S
1
1
®
Power MOSFET
G
- 55 to 150
2
5.7
4.3
2.0
2.5
1.6
Limit
± 12
17.8
11.4
N-Channel MOSFET
260
8.5
40
24
13
6
5
6
e
e
a, b
a, b
e
a, b
a, b
a, b
D
S
2
2
Vishay Siliconix
®
Si7222DN
www.vishay.com
Unit
mJ
°C
W
V
A
1

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SI7336ADP-T1-E3/BKN Summary of contents

Page 1

Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.042 0.047 4 PowerPAK 1212 ...

Page 2

Si7222DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 94 °C/W. SPECIFICATIONS °C, unless otherwise ...

Page 3

SPECIFICATIONS °C, unless otherwise noted J Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time ...

Page 4

Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.050 0.047 0.044 0.041 V = ...

Page 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - ...

Page 6

Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power, Junction-to-Case * The power dissipation P is based dissipation limit ...

Page 7

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 -4 ...

Page 8

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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