SI7336ADP-T1-E3/BKN Siliconix / Vishay, SI7336ADP-T1-E3/BKN Datasheet - Page 4

• Manufacturer Part Number: SI7336ADP-T1-E3/BKN
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI7336ADP-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si7222DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.050
0.047
0.044
0.041
0.038
0.035
0.032
0.029
0.026
0.023
0.020
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
6
5
4
3
2
1
0
0.0
0
0
I
D
= 5.2 A
2.2
V
V
1
4
GS
DS
Q
Output Characteristics
V
- Drain-to-Source Voltage (V)
= 4.5 V
g
GS
- Total Gate Charge (nC)
I
D
V
= 10 thru 3 V
DS
- Drain Current (A)
Gate Charge
4.4
2
8
= 10 V
V
GS
6.6
12
3
V
= 10 V
DS
= 20 V
8.8
16
4
2 V
11.0
20
5
1200
1000
800
600
400
200
2.5
2.0
1.5
1.0
0.5
0.0
2.1
1.8
1.5
1.2
0.9
0.6
0
0.00
- 50
0
C
rss
On-Resistance vs. Junction Temperature
I
0.25
D
- 25
5
= 5.7 A
0.50
V
T
V
10
Transfer Characteristics
DS
J
0
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
0.75
15
25
Capacitance
C
oss
T
1.00
C
20
50
S-83052-Rev. B, 29-Dec-08
25 °C
= 125 °C
C
Document Number: 73439
iss
1.25
25
75
1.50
100
30
1.75
- 55 °C
125
35
2.00
150
40