PIC16C74B-20/P Microchip Technology Inc., PIC16C74B-20/P Datasheet - Page 113

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PIC16C74B-20/P

Manufacturer Part Number
PIC16C74B-20/P
Description
40 PIN, 7 KB OTP, 192 RAM, 33 I/O
Manufacturer
Microchip Technology Inc.
Datasheet

Specifications of PIC16C74B-20/P

A/d Inputs
8-Channel, 8-Bit
Cpu Speed
5 MIPS
Eeprom Memory
0 Bytes
Input Output
33
Interface
I2C/SPI/USART
Memory Type
OTP
Number Of Bits
8
Package Type
40-pin PDIP
Programmable Memory
7K Bytes
Ram Size
192 Bytes
Speed
4 MHz
Timers
2-8-bit, 1-16-bit
Voltage, Range
2.5-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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16.0
Absolute Maximum Ratings
Ambient temperature under bias.............................................................................................................-55°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Voltage on MCLR with respect to V
Voltage on RA4 with respect to V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTE (Note 3) (combined)...................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (Note 3) (combined)..............................................200 mA
Maximum current sunk by PORTC and PORTD (Note 3) (combined)..................................................................200 mA
Maximum current sourced by PORTC and PORTD (Note 3) (combined).............................................................200 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2000 Microchip Technology Inc.
2: Voltage spikes below V
3: PORTD and PORTE not available on the PIC16C63A/73B.
ELECTRICAL CHARACTERISTICS
Thus, a series resistor of 50 - 100 should be used when applying a “low” level to the MCLR/V
than pulling this pin directly to V
DD
with respect to V
IK
OK
(V
DD
SS
I
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
(†)
< 0 or V
SS
SS
SS
I
SS
............................................................................................................... 0V to +8.5V
SS
> V
......................................................................................................... -0.3V to +7.5V
at the MCLR/V
(Note 2) ......................................................................................... 0V to +13.25V
O
(except V
DD
> V
) .......................................................................................................... ±20 mA
SS
DD
.
) ...................................................................................................±20 mA
DD
, MCLR and RA4) .......................................... -0.3V to (V
PP
PIC16C63A/65B/73B/74B
pin, inducing currents greater than 80 mA, may cause latch-up.
DD
x {I
DD
-
I
OH
} +
{(V
DD
-V
OH
) x I
DS30605C-page 113
OH
} + (V
PP
DD
pin rather
O
l x I
+ 0.3V)
OL
)

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