NTE2376 NTE Electronics, Inc., NTE2376 Datasheet - Page 3

• Manufacturer Part Number: NTE2376
• Description: MOSFET; N-Ch; VDSS 200V; RDS(ON) 0.085Ohm; ID 30A; TO-247; PD 190W; VGS +/-20V; gFS 12Mh
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2376

• Channel Type: N-Channel
• Current, Drain: 30 A
• Fall Time: 62 ns (Typ.)
• Gate Charge, Total: 140 nC
• Mounting And Package Type: M3 Screw Mounting
• Operating And Storage Temperature: -55 to +150 °C
• Package Type: TO-247
• Polarization: N-Channel
• Power Dissipation: 190 W
• Resistance, Drain To Source On: 0.085 Ohm
• Resistance, Thermal, Junction To Case: 0.65 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 40 °C⁄W
• Time, Rise: 86 ns (Typ.)
• Time, Turn-off Delay: 70 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 12 Mhos
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 2 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

.143 (3.65)
Dia Max
(5.5)
.217
.215 (5.45)
Note: Drain connected to metal part of mounting surface.
G
.626 (15.9)
Max
D
S
(4.0)
.157
.047 (1.2)
(20.0)
(14.2)
.787
.559
.197 (5.0)
Min
TO247
(2.4)
.094
Note
See