SIC779CD-T1-GE3 Vishay, SIC779CD-T1-GE3 Datasheet - Page 6

MOSFET & Power Driver ICs 40A 3-16V Built-In PWM Cont

SIC779CD-T1-GE3

Manufacturer Part Number
SIC779CD-T1-GE3
Description
MOSFET & Power Driver ICs 40A 3-16V Built-In PWM Cont
Manufacturer
Vishay
Type
DrMOS Power Stager
Datasheet

Specifications of SIC779CD-T1-GE3

Product
Half-Bridge Drivers
Rise Time
8 ns
Fall Time
8 ns
Propagation Delay Time
20 ns
Supply Voltage (max)
16 V
Supply Voltage (min)
3 V
Supply Current
400 uA
Maximum Power Dissipation
25 W
Maximum Operating Temperature
+ 125 C
Package / Case
MLP-66-40
Minimum Operating Temperature
- 40 C
Output Current
40 A
Output Voltage
5 V
Transistor Polarity
N-Channel
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
SiC779
Vishay Siliconix
TRISTATE PWM VOLTAGE THRESHOLD DIAGRAM
SMOD OPERATION DIAGRAM
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DEVICE TRUTH TABLE
V
V
th_pwm_r
th_pwm_f
V
V
th_tri_f
th_tri_r
DSBL#
Open
H
H
H
H
L
PWM
GH
GL
SMOD
DSBL
PWM
V
GH
SW
GL
SMOD
X
X
H
H
L
L
t
d(ON)
This document is subject to change without notice.
I
t
L
d(OFF)
> 0
t
TSHO
I
PWM
L
= 0
X
X
H
H
L
L
Figure 3
Figure 4
t
TSHO
GH
H
H
L
L
L
L
S11-0703-Rev. B, 18-Apr-11
Document Number: 67538
www.vishay.com/doc?91000
H (I
L
> 0), L (I
GL
H
L
L
L
L
L
 0)

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