SIC779CD-T1-GE3 Vishay, SIC779CD-T1-GE3 Datasheet - Page 15

• Manufacturer Part Number: SIC779CD-T1-GE3
• Description: MOSFET & Power Driver ICs 40A 3-16V Built-In PWM Cont
• Manufacturer: Vishay
• Type: DrMOS Power Stager

Specifications of SIC779CD-T1-GE3

• Product: Half-Bridge Drivers
• Rise Time: 8 ns
• Fall Time: 8 ns
• Propagation Delay Time: 20 ns
• Supply Voltage (max): 16 V
• Supply Voltage (min): 3 V
• Supply Current: 400 uA
• Maximum Power Dissipation: 25 W
• Maximum Operating Temperature: + 125 C
• Package / Case: MLP-66-40
• Minimum Operating Temperature: - 40 C
• Output Current: 40 A
• Output Voltage: 5 V
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

LAND PATTERN DIMENSIONS
TAPE AND REEL CARRIER TAPE DIMENSIONS
Notes:
1. 10 sprocket hole pitch cumulative tolerance ± 0.2.
2. Camber in compliance with EIA 481.
3. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67538.
Document Number: 67538
S11-0703-Rev. B, 18-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R 0.3 max.
0.30 ± 0.05
Section A-A
2.00 ± 0.10 see note 3
K o
4.00 see note 1
B o
0.276
2.200
4.600
A o
0.200
This document is subject to change without notice.
2.200
A o = 6.30
B o = 6.30
K o = 1.10
0.276
Figure 8 - PowerPAK MLP 66-40
Figure 9 - PowerPAK MLP 66-40
Ø 1.5
1
+ 0.1
- 0.0
40
12.00
Ø 1.50 min.
R 0.25
0.025
0.25
0.100
0.100
0.100
0.100
A
A
0.100
0.100
Vishay Siliconix
www.vishay.com/doc?91000
1
1.75 ± 0.1
0.025
40
www.vishay.com
see note 3
SiC779
7.5 ± 0.1
16.0 ± 0.3
15