K6R4016V1D-UI10T00 SAMSUNG, K6R4016V1D-UI10T00 Datasheet - Page 7

• Manufacturer Part Number: K6R4016V1D-UI10T00
• Manufacturer: SAMSUNG

K6R4016V1D
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
TIMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
UB, LB Valid to End of Write
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(2)
TIMING WAVEFORM OF READ CYCLE(1)
V
Current
Address
CS
UB, LB
OE
Data out
Address
Data Out
CC
Parameter
I
I
CC
SB
Previous Valid Data
High-Z
Symbol
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
WP1
WC
CW
WR
DW
OW
AW
WP
BW
AS
DH
t
PU
t
Min
t
BLZ(4,5)
LZ(4,5)
(WE=V
(Address Controlled
8
6
0
6
6
8
6
0
0
4
0
3
K6R4016V1D-08
t
t
OLZ
OH
50%
IH
PRELIMPreliminaryPPPPPPPPPINARY
t
AA
)
t
CO
t
- 7 -
t
BA
OE
t
AA
Max
,
CS=OE=V
4
-
-
-
-
-
-
-
-
-
-
-
t
RC
t
RC
IL
, WE=V
Valid Data
IH
Min
10
10
7
0
7
7
7
0
0
5
0
3
, UB, LB=V
K6R4016V1D-10
IL
Valid Data
)
t
OHZ
CMOS SRAM
50%
t
PD
Max
5
-
-
-
-
-
-
-
-
-
-
-
t
t
t
HZ(3,4,5)
BHZ(3,4,5)
OH
Mar. 2004
Unit
Rev 4.0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns