K6R4016V1D-UI10T00 SAMSUNG, K6R4016V1D-UI10T00 Datasheet - Page 5

• Manufacturer Part Number: K6R4016V1D-UI10T00
• Manufacturer: SAMSUNG

CAPACITANCE*
* Capacitance is sampled and not 100% tested.
K6R4016V1D
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
** L-var is only supported with TBGA package type.
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
Input/Output Capacitance
Input Capacitance
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
The above parameters are also guaranteed at industrial temperature range.
IL
IH
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
Parameter
CC
+ 2.0V a.c (Pulse Width
Item
(T
A
=25 C, f=1.0MHz)
Symbol
8ns) for I
V
I
V
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
8ns) for I
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
20mA
OL
OH
IN
OUT
IN
Symbol
=8mA
=V
=-4mA
V
V
V
V
V
=V
CC
SS
.
IH
SS
IH
IL,
CC
IL
20mA.
Symbol
SS
or OE=V
V
-0.2V or V
to V
C
IN
C
to V
I/O
=V
IN
CC
IH
CC
CC
PRELIMPreliminaryPPPPPPPPPINARY
or V
IH
-0.2V,
IH
IN
or WE=V
(T
- 5 -
IL,
0.2V
-0.3**
Test Conditions
A
Min
3.0
2.0
I
=0 to 70 C, Vcc=3.3 0.3V, unless otherwise specified)
OUT
0
Test Conditions
=0mA
(T
IL
V
V
A
I/O
IN
=0 to 70 C)
=0V
=0V
Typ
Com.
3.3
Ind.
0
-
-
Normal
L-ver.**
TYP
-
-
10ns
10ns
8ns
8ns
V
CC
Max
+0.3***
3.6
0.8
0
CMOS SRAM
Min
Max
2.4
-2
-2
-
-
-
-
-
-
-
-
8
6
Max
2.4
0.4
80
65
90
75
20
2
2
5
-
Unit
Mar. 2004
Unit
V
V
V
V
pF
pF
Rev 4.0
Unit
mA
mA
V
V
A
A