MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 80
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
ROHM
Quantity:
1 001
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
MICRON
Quantity:
2 690
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Electrical Specifications – DC Characteristics and Operating Conditions
Table 25: DC Characteristics and Operating Conditions (3.3V)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Parameter
Sequential READ current
PROGRAM current
ERASE current
Standby current (TTL)
Standby current (CMOS)
Staggered power-up cur-
rent
Input leakage current
Output leakage current
Input high voltage
Input low voltage, all in-
puts
Output high voltage
Output low voltage
Output low current
Notes:
t
RC =
CE#, CLE, ALE, WE#, RE#,
Line capacitance = 0.1µF
1. Measurement is taken with 1ms averaging intervals and begins after V
2. I
3. V
I/O[7:0], I/O[15:0],
CE# = V
V
Rise time = 1ms
V
t
WP# = 0V/V
WP# = 0V/V
OUT
RC (MIN); CE# = V
I
Conditions
IN
OL
OH
I
I
Electrical Specifications – DC Characteristics and Operating
OL
V
OH
OUT
CE# = V
= 0V to V
OL
(RB#) may need to be relaxed if R/B pull-down strength is not set to full.
= 0V to V
= –400µA
= 2.1mA
WP#
and V
= 0.4V
= 0mA
–
–
CC
–
- 0.2V;
IH
OL
;
CC
CC
CC
CC
may need to be relaxed if I/O drive strength is not set to full.
IL
;
I
Symbol
OL
V
I
I
I
V
I
I
V
I
V
(R/B#)
CC1
CC2
CC3
I
SB1
SB2
I
LO
ST
OH
LI
OL
80
IH
IL
0.67 x V
0.8 x V
Min
–0.3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
–
–
–
–
–
–
–
8
1Gb x8, x16: NAND Flash Memory
CC
CC
Typ
25
25
25
10
10
–
–
–
–
–
–
–
–
10 per die
V
0.2 x V
CC
Max
±10
±10
0.4
35
35
35
50
1
+ 0.3
–
–
© 2010 Micron Technology, Inc. All rights reserved.
CC
CC
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
reaches V
Conditions
Notes
CC
1
3
3
2
(MIN).