MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 22

• Manufacturer Part Number: MT29F1G08ABADAH4:D
• Description: MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAH4:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Asynchronous Data Output
Figure 14: Asynchronous Data Output Cycles
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
RDY
I/Ox
CE#
RE#
Data can be output from a die (LUN) if it is in a READY state. Data output is supported
following a READ operation from the NAND Flash array. Data is output from the cache
register of the selected die (LUN) on the falling edge of RE# when CE# is LOW, ALE is
LOW, CLE is LOW, and WE# is HIGH.
If the host controller is using a
rising edge of RE# (see the figure below for proper timing). If the host controller is using
a
Data is output on I/O[7:0] on x8 devices and on I/O[15:0] on x16 devices.
t CEA
t RR
t
RC of less than 30ns, the host can latch the data on the next falling edge of RE#.
t REA
t RP
D
OUT
t RC
t REH
t REA
22
t
RC of 30ns or greater, the host can latch the data on the
Asynchronous Interface Bus Operation
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t RHZ
1Gb x8, x16: NAND Flash Memory
t REA
D
t COH
© 2010 Micron Technology, Inc. All rights reserved.
OUT
t RHOH
t RHZ
t CHZ
Don’t Care