SPP11N60C3XK Infineon Technologies, SPP11N60C3XK Datasheet - Page 4

• Manufacturer Part Number: SPP11N60C3XK
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPP11N60C3XK

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.38Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Power Dissipation: 125W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
Rev
th1
th2
th3
th4
th5
th6
. 3.2
SPP_I
0.015
0.056
0.197
0.216
0.083
0.03
P
tot
(t)
Value
T
j
C
0.056
0.194
0.413
2.522
SPA
0.15
0.03
th1
R
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
T
V
V
di
T
C
GS
R
j
F
=25°C
C
=25°C
=480V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
Page 4
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
,
0.0001878
0.0007106
0.000988
0.002791
0.007285
SPP_I
0.063
E xternal H eatsink
min.
-
-
-
-
-
-
-
Value
Values
0.0001878
0.0007106
1200
0.000988
0.002791
0.007401
typ.
400
41
1
6
0.412
-
-
SPP11N60C3
SPA
2009-11-27
max.
600
1.2
11
33
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs