SPP11N60C3XK Infineon Technologies, SPP11N60C3XK Datasheet
SPP11N60C3XK
Specifications of SPP11N60C3XK
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SPP11N60C3XK Summary of contents
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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 ...
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Maximum Ratings Parameter Drain Source voltage slope V = 480 125 ° Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ...
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Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to ...
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Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol ...
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Power dissipation tot C SPP11N60C3 140 W 120 110 100 Safe operating area ...
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Transient thermal impedance thJC p parameter K Typ. ...
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Typ. drain-source on resistance R =f(I ) DS(on) D parameter: T =150° Ω 4. 1.6 1.4 1.2 1 0.8 0.6 0 Typ. transfer characteristics ≥ 2 ...
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Forward characteristics of body diode parameter µ SPP11N60C3 °C typ 150 °C ...
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Typ. drain source voltage slope dv/dt = f(R ), inductive load par.: V =380V, V =0/+13V 140 V/ns dv/dt(off) 120 110 100 dv/dt(on ...
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Avalanche energy par 5 350 mJ 250 200 150 100 100 23 Avalanche power losses P = ...
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Typ. C stored energy oss E =f(V ) oss DS 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1 100 200 300 Definition of diodes switching characteristics . 3 .2 Rev SPI11N60C3, ...
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PG-TO-220-3-1, PG-TO-220-3-21 Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 12 SPP11N60C3 2009-11-27 ...
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PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute). Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 13 SPP11N60C3 2009-11-27 ...
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PG-TO-262-3-1 (I²-PAK) Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 14 SPP11N60C3 2009-11-27 ...
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PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute) Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 15 SPP11N60C3 2009-11-27 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...