MT36HTS1G72PY-667A1 Micron Technology Inc, MT36HTS1G72PY-667A1 Datasheet - Page 8

• Manufacturer Part Number: MT36HTS1G72PY-667A1
• Manufacturer: Micron Technology Inc

Specifications of MT36HTS1G72PY-667A1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 1Gx72
• Total Density: 8GByte
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 3.294A
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

I
Table 10:
PDF: 09005aef822553c2/Source: 09005aef822553af
HTJ_S36C512_1Gx72.fm - Rev. F 5/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
t
valid commands; Address bus inputs are switching;
Data pattern is same as I
Precharge power-down current: All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current: All device banks idle;
is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus
inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
commands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
DD
RC =
RAS =
CK =
RAS =
RP =
RAS =
CK =
Specifications
t
t
t
t
RP (I
RC (I
CK (I
CK (I
t
t
t
OUT
OUT
RAS MIN (I
RAS MAX (I
RAS MAX (I
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
DD
); CKE is HIGH, S# is HIGH between valid commands; Address bus
),
DDR2 I
Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the
1Gb (256 Meg x 4) component data sheet
); CKE is LOW; Other control and address bus
),
t
t
RAS =
RC =
DD
DD
Notes:
), AL = 0;
DD
DD
),
t
),
),
DD
RC (I
t
t
RAS MIN (I
RCD =
t
t
DD
RP =
RP =
t
DD
CK =
Specifications and Conditions – 4GB (HTJ) Module
), AL = 0;
DD
4W
1. Value calculated as one module rank in this operating condition, all other module ranks in
2. Value calculated reflects all module ranks in this operating condition.
t
CK =
),
t
t
RP (I
RP (I
t
t
RCD (I
CK (I
t
I
RRD =
DD
DD
2
t
DD
DD
CK (I
DD
P
DD
DD
t
); CKE is HIGH, S# is HIGH between valid
CK =
DD
); CKE is HIGH, S# is HIGH between valid
); CKE is HIGH, S# is HIGH between valid
(CKE LOW) mode.
); REFRESH command at every
), AL = 0;
), AL =
t
RRD (I
); CKE is HIGH, S# is HIGH between
DD
t
),
CK (I
t
RC =
t
DD
RCD (I
DD
4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
t
),
CK =
),
t
t
t
RCD =
RC (I
CK =
t
t
DD
RAS =
CK =
t
CK =
t
CK (I
) - 1 ×
DD
t
CK (I
t
t
),
t
RCD (I
OUT
CK (I
CK =
t
t
t
DD
CK (I
CK =
RAS MAX (I
8
t
DD
),
CK (I
= 0mA;
DD
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
),
DD
DD
CK (I
t
CK (I
),
DD
); CKE is
); CKE is
t
);
DD
RFC (I
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
); CKE
); CKE
),
DD
)
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
4R
2P
3P
0
1
5
6
7
1
1
2
2
1
2
2
1
2
2
2
1
Electrical Specifications
1,386
1,836
1,440
1,440
1,080
1,620
2,376
2,376
7,560
4,986
-53E
252
360
252
©2003 Micron Technology, Inc. All rights reserved.
1,386
1,746
1,260
1,260
1,080
1,440
2,016
2,016
7,380
4,806
-40E
252
360
252
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA