MT36HTS1G72PY-667A1 Micron Technology Inc, MT36HTS1G72PY-667A1 Datasheet - Page 2

• Manufacturer Part Number: MT36HTS1G72PY-667A1
• Manufacturer: Micron Technology Inc

Specifications of MT36HTS1G72PY-667A1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 1Gx72
• Total Density: 8GByte
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 3.294A
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 2:
Table 3:
Table 4:
Table 5:
PDF: 09005aef822553c2/Source: 09005aef822553af
HTJ_S36C512_1Gx72.fm - Rev. F 5/07 EN
Parameter
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT36HTJ51272Y-53E__
MT36HTJ51272Y-40E__
MT36HTS51272Y(P)-667__
MT36HTS51272Y(P)-53E__
MT36HTS51272(P)Y-40E__
MT36HTS1G72(P)Y-667__
MT36HTS1G72(P)Y-53E__
MT36HTS1G72(P)Y-40E__
Part Number
Part Number
Part Number
Addressing
Part Numbers and Timing Parameters - 4GB (HTJ) Modules
Base device: MT47H512M4SBT
Part Numbers and Timing Parameters - 4GB (HTS) Modules
Base device: MT47H512M4THN
Part Numbers and Timing Parameters - 8GB Modules
Base device: MT47H1GM4THM
Notes:
2
2
2
1. Contact Micron for base device data sheets.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT36HTS51272Y-667A1.
Module
Density
Module
Density
Module
Density
4GB
4GB
4GB
4GB
4GB
8GB
8GB
8GB
1Gb (256 Meg x 4)
2K (A0–A9, A11)
16K (A0–A13)
8 (BA0–BA2)
2 (S0#, S1#)
4GB (HTJ)
1
1KB
1
1
8K
, 1Gb stacked DDR2 SDRAM
, 4Gb TwinDie DDR2 SDRAM
, 2Gb TwinDie DDR2 SDRAM
4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Configuration
Configuration
Configuration
512 Meg x 72
512 Meg x 72
512 Meg x 72
512 Meg x 72
512 Meg x 72
1 Gig x 72
1 Gig x 72
1 Gig x 72
2
2Gb TwinDie (512 Meg x 4)
2K (A0–A9, A11)
16K (A0–A13)
8 (BA0–BA2)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2 (S0#, S1#)
Bandwidth
Bandwidth
Bandwidth
4GB (HTS)
Module
Module
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
4.3 GB/s
3.2 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
1KB
8K
Memory Clock/
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
Data Rate
©2003 Micron Technology, Inc. All rights reserved.
2K (A0–A9, A11)
(1,024 Meg x 4)
32K (A0–A14)
4Gb TwinDie
8 (BA0–BA2)
2 (S0#, S1#)
8GB
1KB
8K
(CL-
(CL-
(CL-
Latency
Latency
Latency
t
t
t
Features
4-4-4
3-3-3
5-5-5
4-4-4
3-3-3
5-5-5
4-4-4
3-3-3
RCD-
RCD-
RCD-
t
t
t
RP)
RP)
RP)