MT36HTS1G72PY-667A1 Micron Technology Inc, MT36HTS1G72PY-667A1 Datasheet - Page 4
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MT36HTS1G72PY-667A1
Manufacturer Part Number
MT36HTS1G72PY-667A1
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT36HTS1G72PY-667A1.pdf
(19 pages)
Specifications of MT36HTS1G72PY-667A1
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
1Gx72
Total Density
8GByte
Access Time (max)
45ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
3.294A
Number Of Elements
36
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
Table 7:
PDF: 09005aef822553c2/Source: 09005aef822553af
HTJ_S36C512_1Gx72.fm - Rev. F 5/07 EN
DQS0#–DQS17#
DQS0–DQS17,
ODT0, ODT1
RAS#, CAS#,
CKE0, CKE1
DQ0–DQ63
CK0, CK0#
BA0–BA2
SA0–SA2
CB0–CB7
Symbol
E
S0#, S1#
A0–A15
RESET#
V
P
RR
V
WE#
SDA
V
DDSPD
AR
V
RFU
SCL
Vss
DD
NC
_O
REF
DD
_I
Q
N
UT
Pin Descriptions
(LVCMOS)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL18)
Output
Supply
Supply
Supply
Supply
Supply
drain)
(open
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
I/O
–
–
On-die termination: ODT (registered HIGH) enables termination resistance internal to the
DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS, DQS#, and
CB. The ODT input will be ignored if disabled via the LOAD MODE command.
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of CK#. Output data
(DQs and DQS/DQS#) is referenced to the crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates
clocking circuitry on the DDR2 SDRAM.
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command
decoder.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Bank address inputs: BA0–BA2 define to which device bank an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA0–BA2 define which mode register, including MR,
EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE command.
Address inputs: Provide the row address for ACTIVE commands, and the column address
and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the
memory array in the respective bank. A10 sampled during a PRECHARGE command
determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank
selected by BA0–BA2) or all device banks (A10 HIGH). The address inputs also provide the op-
code during a LOAD MODE command. 4GB modules are addressed by A0–A13; 8GB modules
by A0–A14, and A15 is required for register parity function.
Parity bit for the address and control bus.
Serial clock for presence-detect: SCL is used to synchronize the presence-detect data
transfer to and from the module.
Presence-detect address inputs: These pins are used to configure the presence-detect
devices.
Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be
used during power up to ensure that CKE is LOW and DQs are High-Z.
Data strobe: Output with read data, input with write data for source synchronous
operation. Edge-aligned with read data, center-aligned with write data. DQS# is only used
when differential data strobe mode is enabled via the LOAD MODE command.
Data input/output: Bidirectional data bus.
Check bits.
Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data
into and out of the presence-detect portion of the module.
Parity error found on the address and control bus.
Power supply: 1.8V ±0.1V.
DQ power supply: 1.8V ±0.1V.
SSTL_18 reference voltage.
Ground.
Serial EEPROM positive power supply: +1.7V to +3.6V.
No connect: These pins should be left unconnected.
Reserved for future use.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
4
Description
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Pin Assignments and Descriptions
©2003 Micron Technology, Inc. All rights reserved.