IS42S16160A-6T ISSI, Integrated Silicon Solution Inc, IS42S16160A-6T Datasheet - Page 5

• Manufacturer Part Number: IS42S16160A-6T
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16160A-6T

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5ns
• Maximum Clock Rate: 167MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 160mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

IS42S83200A
IS42S16160A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
11/01/05
BASIC FUNCTIONS
The IS42S83200A/16160A provides basic
functions, bank (row) activate, burst read / write, bank (row)
precharge, and auto / self refresh.
Each command is defined by control signals of /RAS,
/RAS
/CAS
CKE
CLK
/WE
A10
/CS
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.
First output data appears after /CAS latency. When A10 =H at this command,
the bank is deactivated after the burst read (auto-precharge, READA).
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total
data length to be written is set by burst length. When A10 =H at this command,
the bank is deactivated after the burst write (auto-precharge, WRITEA).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This com­
mand also terminates burst read / write operation. When A10 =H at this
command, all banks are deactivated (precharge all, PREA ).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address including bank
address are generated internally. After this command, the banks are
precharged automatically.
(4-bank x 8,388,608 - word x 8-bit)
(4-bank x 4,194,304 - word x 16-bit)
Chip Select : L=select, H=deselect
Command
Command
Command
Refresh Option @ refresh command
Precharge Option @ precharge or read/write command
/CAS and /WE at CLK rising edge. In addition to 3 signals,
/CS, CKE and A10 are used as chip select, refresh opt ion,
and precharge option, respectively .
To know the detailed definition of commands,
please see the command truth table.
define basic command
ISSI
®
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