IS42S16160A-6T ISSI, Integrated Silicon Solution Inc, IS42S16160A-6T Datasheet - Page 22

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IS42S16160A-6T

Manufacturer Part Number
IS42S16160A-6T
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S16160A-6T

Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
5ns
Maximum Clock Rate
167MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
160mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
IS42S83200A
IS42S16160A
22
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank.Write recovery time(tWR) is
required from the last data to PRE command. During write recovery, data inputs must be masked by DQM.
[Write Interrupted by Burst Terminate]
Burst terminate command can terminate burst write operation.In this case, the write recovery time is not
required and the bank remains active. WRITE to TBST interval is minimum 1 CLK.
A0-9,11-12
A0-9,11-12
Command
Command
BA0-1
BA0-1
DQM
CLK
A10
CLK
A10
DQ
DQ
(4-bank x 8,388,608 - word x 8-bit)
(4-bank x 4,194,304 - word x 16-bit)
ACT
ACT
Xa
00
Xa
00
0
0
Write interrupted by Terminate (BL=4)
Write interrupted by Precharge (BL=4)
Write
Write
Da0
Da0
Ya
00
Ya
00
0
0
Da1
Da1
TBST
tWR
PRE
Integrated Silicon Solution, Inc. — 1-800-379-4774
00
0
Write
Db0
tRP
Yb
00
0
ACT
Db1
Xa
00
0
Db2
Db3
ISSI
11/01/05
Rev. D
®

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