TDF8590TH/N1,518 NXP Semiconductors, TDF8590TH/N1,518 Datasheet - Page 15

• Manufacturer Part Number: TDF8590TH/N1,518
• Manufacturer: NXP Semiconductors

Specifications of TDF8590TH/N1,518

• Operational Class: Class-D
• Output Power (typ): 160x1@8Ohm/80x2@4OhmW
• Audio Amplifier Function: Speaker
• Total Harmonic Distortion: 0.15@8Ohm@1W%
• Single Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (typ): ±27V
• Power Supply Requirement: Dual
• Rail/rail I/o Type: No
• Single Supply Voltage (min): Not RequiredV
• Single Supply Voltage (max): Not RequiredV
• Dual Supply Voltage (min): ±14V
• Dual Supply Voltage (max): ±29V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 24
• Package Type: HSOP
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
11. Switching characteristics
Table 10.
V
12. Application information
TDF8590TH_2
Product data sheet
Symbol
Internal oscillator
f
External oscillator or frequency tracking
V
V
Drain source on-state resistance of the output transistors
R
R
osc
DD
f
H(OSC)min
L(OSC)max
DSon(ls)
DSon(hs)
track
= 27 V; T
Switching characteristics
Parameter
oscillator frequency
minimum HIGH-level voltage on pin OSC
maximum LOW-level voltage on pin OSC
tracking frequency range
low-side drain-source on-state resistance
high-side drain-source on-state resistance
amb
12.1 BTL application
12.2 Output power estimation
= 40 C to +85 C; T
When using the power amplifier in a mono BTL application the inputs of both channels
must be connected in parallel and the phase of one of the inputs must be inverted (see
Figure
demodulation filters.
The achievable output powers in SE and BTL applications can be estimated using the
following expressions:
SE:
BTL:
P
P
o 0.5%
7). The loudspeaker is connected between the outputs of the two single-ended
o 0.5%
j
=
= 40 C to +150 C; unless otherwise specified.
=
---------------------------------------------------------------------------------------------------------------------------------
------------------------------------------------------
R
------------------------------------------------------------------------------------------------------------------------------------------------------------------------- -
------------------------------------------------------------------------------------------- 2V
R
L
L
+
+
R
DSon hs
Rev. 02 — 23 April 2007
R
DSon hs
R
L
2
Conditions
typical; R
maximum; R
minimum; R
referred to SGND
referred to SGND
T
T
T
T
+
j
j
j
j
80 W SE (4 ) or 1
= 85 C; I
= 25 C; I
= 85 C; I
= 25 C; I
R
+
R
s L
R
L
DSon ls
2
ext(OSC)
V
DS
DS
DS
DS
ext(OSC)
R
ext(OSC)
P
L
= 6 A
= 6 A
= 6 A
= 6 A
+
= 30.0 k
1 t
2
2R
–
= 48.9 k
= 15.4 k
s L
R
w min
L
160 W BTL (8 ) class-D amplifier
f
P
osc
1 t
Min
290
-
-
4
0
210
-
-
-
-
2
–
TDF8590TH
W
w min
Typ
310
560
200
-
-
-
250
190
300
220
© NXP B.V. 2007. All rights reserved.
f
Max
344
-
-
6
1
600
275
210
330
240
osc
2
W
15 of 30
Unit
kHz
kHz
kHz
V
V
kHz
m
m
m
m