MT45W2MW16PGA-70 WT Micron Technology Inc, MT45W2MW16PGA-70 WT Datasheet - Page 18

• Manufacturer Part Number: MT45W2MW16PGA-70 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W2MW16PGA-70 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Table 5:
Maximum and Typical Standby Currents
Table 6:
PDF: 09005aef82832fa7 / Source: 09005aef82832f97
32mb_asyncpage_cr1_0_p24z_2.fm - Rev. B 12/09 EN
Description
Description
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Operating Current
Asynchronous random
READ/WRITE
Asynchronous page READ
Standby current
Partial-array refresh
standby current
Electrical Characteristics and Operating Conditions
Wireless temperature
Partial-Array Refresh Specifications and Conditions
Notes:
Notes:
V
1. –30°C exceeds the CellularRAM Workgroup 1.0 specification of –25°C.
2. Input signals may overshoot to V
3. V
4. Input signals may undershoot to V
5. This parameter is specified with the outputs disabled to avoid external loading effects. The
6. I
The following table and figure refer to the maximum and typical standby currents for the
MT45W2MW16PGA device. The typical values shown in Figure 13 on page 19 are
measured with the default on-chip temperature sensor control enabled.
1. I
Chip enabled; I
IN
Conditions
CE# = V
V
user must add the current required to drive output capacitance expected in the actual sys-
tem.
low standby current, all inputs must be driven to V
up to 500ms after power-up or when entering standby mode.
changes to the PAR array partition or when entering standby mode. In order to achieve low
standby current, all inputs must be driven to either V
= V
V
V
SB
PAR
V
IH
CC
IN
IN
Chip disabled
I
IN
OE# = V
Conditions
OH
I
(MAX) values measured with PAR set to FULL ARRAY and at +85°C. In order to achieve
CE# = V
CC
Q - 0.4V.
OL
(MIN) value is not aligned with CellularRAM Workgroup 1.0 specification of
1
= V
= V
(MAX) values measured at 85°C. I
= 0 to V
(–30ºC ≤ T
Q or 0V;
= –0.2mA
= 0.2mA
CC
CC
CC
Q
Q or 0V
Q or 0V
IH
CC
CC
OUT
or
Q
32Mb: 2 Meg x 16 Async/Page CellularRAM 1.0 Memory
Q
C
= 0
≤ +85 ºC), Industrial temperature (–40ºC < T
I
PAR
V
I
V
I
CC
V
V
V
V
I
CC
I
CC
I
LO
SB
OH
OL
LI
Symbol
CC
IH
IL
1P
1
Q
18
(no designation)
Symbol
Standard power
CC
SS
Q + 1.0V for periods less than 2ns during transitions.
- 1.0V for periods less than 2ns during transitions.
–70
–70
PAR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
might be slightly higher for up to 500ms after
0.8 V
Min
-0.2
1.7
1.7
1.4
Array Partition
CC
CC
Q or V
CC
Q
Q or V
Full
1/2
1/4
1/8
Electrical Characteristics
0
V
0.2 V
CC
SS
Max
1.95
+0.4
C
Q + 0.2
110
. I
3.6
20
15
SS
1
1
< +85ºC)
SB
.
CC
©2007 Micron Technology, Inc. All rights reserved.
may be slightly higher for
Q
Units
Max
110
105
mA
mA
μA
μA
μA
95
95
70
V
V
V
V
V
V
Notes
Unit
2, 3
µA
4
5
5
6