MT48H16M16LFBF-75 IT:G Micron Technology Inc, MT48H16M16LFBF-75 IT:G Datasheet - Page 63
![](/photos/31/34/313423/557-54-vfbga_sml.jpg)
MT48H16M16LFBF-75 IT:G
Manufacturer Part Number
MT48H16M16LFBF-75 IT:G
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H16M16LFBF-75_ITG.pdf
(86 pages)
Specifications of MT48H16M16LFBF-75 IT:G
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
8/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
80mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
- Current page: 63 of 86
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Figure 34: WRITE – DQM Operation
Burst Read/Single Write
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
Note:
t RCD
t CK
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access
of a single column location (burst of one), regardless of the programmed burst length.
READ commands access columns according to the programmed burst length and se-
quence, just as in the normal mode of operation (M9 = 0).
T1
NOP
1. For this example, BL = 4.
Disable auto precharge
Enable auto precharge
t CMS
t CL
t DS
Column m
WRITE
T2
Bank
D
t CMH
IN
t DH
t CH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T3
NOP
63
t DS
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
IN
t DH
t DS
T5
NOP
D
IN
t DH
©2008 Micron Technology, Inc. All rights reserved.
NOP
T6
WRITE Operation
NOP
T7
Don’t Care
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