MT48H16M16LFBF-75 IT:G Micron Technology Inc, MT48H16M16LFBF-75 IT:G Datasheet - Page 17
![](/photos/31/34/313423/557-54-vfbga_sml.jpg)
MT48H16M16LFBF-75 IT:G
Manufacturer Part Number
MT48H16M16LFBF-75 IT:G
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H16M16LFBF-75_ITG.pdf
(86 pages)
Specifications of MT48H16M16LFBF-75 IT:G
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
8/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
80mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
Electrical Specifications – I
Table 7: I
Note 1 applies to all parameters and conditions; V
Table 8: I
Note 1 applies to all parameters and conditions; V
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Nonpower-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks ac-
tive; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; READ or WRITE; All banks active, half
of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Nonpower-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks ac-
tive; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; READ or WRITE; All banks active, half
of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
DD
DD
Specifications and Conditions (x16)
Specifications and Conditions (x32)
DD
t
t
t
t
DD
DD
RFC =
RFC = 7.8125μs
RFC =
RFC = 7.8125μs
Parameters
/V
/V
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
DDQ
DDQ
t
t
RFC (MIN)
RFC (MIN)
= 1.70–1.95V
= 1.70–1.95V
t
t
17
RC =
RC =
Electrical Specifications – I
t
t
RC
RC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
Symbol
I
I
I
I
I
I
I
I
I
DD2N
DD3N
I
I
I
I
DD2N
DD3N
I
I
I
DD2P
DD3P
DD2P
DD3P
DD1
DD4
DD5
DD6
DD1
DD4
DD5
DD6
I
I
ZZ
ZZ
300
105
110
300
100
95
15
20
10
60
15
20
90
10
-6
-6
3
5
3
5
Max
Max
©2008 Micron Technology, Inc. All rights reserved.
-75
300
100
300
-75
90
12
20
85
10
50
12
20
80
95
10
3
5
3
5
DD
Unit
Unit
Parameters
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
2, 3, 4, 6
2, 3, 4, 7
2, 3, 4, 6
2, 3, 4, 7
Notes
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
5, 8
5, 8
5
5