MT46V16M16TG-5BLIT Micron Technology Inc, MT46V16M16TG-5BLIT Datasheet - Page 8

• Manufacturer Part Number: MT46V16M16TG-5BLIT
• Manufacturer: Micron Technology Inc

Specifications of MT46V16M16TG-5BLIT

• Lead Free Status / Rohs Status: Not Compliant

Functional Block Diagrams
Figure 3:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
BA0, BA1
A0–A12,
RAS#
CAS#
WE#
CKE
CK#
CS#
CK
15
Address
register
Mode registers
64 Meg x 4 Functional Block Diagram
15
Control
logic
counter
13
Refresh
11
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory
containing 268,435,456 bits. It is internally configured as a 4-bank DRAM.
2
13
2
address
Row-
MUX
Column-
counter/
address
control
13
Bank
latch
logic
decoder
address
Bank 0
latch
row-
and
10
1
8192
(8,192 x 1,024 x 8)
Sense amplifiers
DM mask logic
I/O gating
decoder
Column
memory
Bank 0
1024
Bank 1
8192
array
(x8)
8
Bank 2
Bank 3
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8
8
READ
latch
256Mb: x4, x8, x16 DDR SDRAM
out
CK
CK
WRITE
drivers
FIFO
and
4
4
CK
Functional Block Diagrams
in
Column 0
Column 0
MUX
Mask
Data
8
2
1
1
4
4
generator
registers
Input
©2003 Micron Technology, Inc. All rights reserved.
DQS
4
Data
1
1
4
4
1
1
4
1
DQS
Drivers
DLL
CK
Rcvrs
DQ0–DQ3
DQS
DM