IS42S16100E-5T-TR ISSI, Integrated Silicon Solution Inc, IS42S16100E-5T-TR Datasheet - Page 27

• Manufacturer Part Number: IS42S16100E-5T-TR
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100E-5T-TR

• Organization: 1Mx16
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 170mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

IS42S16100E, IC42S16100E
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (t
precharge operation starts one clock period after the last
burst data input.
CAS latency = 2, burstlength = 4
CAS latency = 3, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/22/08
COMMAND
COMMAND
CLK
CLK
DQ
DQ
dal
WRITE WITH AUTO-PRECHARGE
WRITE WITH AUTO-PRECHARGE
) is t
rp
WRITE A0
WRITE A0
D
D
plus one CLK period. That is, the
IN
IN
(BANK 0)
(BANK 0)
0
0
D
D
IN
IN
1
1
dal
) between the
D
D
IN
IN
2
2
D
D
IN
IN
3
3
Therefore, the selected bank can be made active after a
delay of t
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
is set to full page.
CAS Latency
PRECHARGE START
PRECHARGE START
dal
t
dal
t
t
.
DAL
RP
t
t
DAL
ACT 0
RP
2CLK
+t
3
rp
2CLK
+t
ACT 0
2
rp
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