ATF521P8 Avago Technologies US Inc., ATF521P8 Datasheet - Page 9

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ATF521P8

Manufacturer Part Number
ATF521P8
Description
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF521P8

Configuration
Single Dual Source
Drain-gate Voltage (max)
-5 to 1V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
ATF-521P8 Typical Scattering Parameters at 25°C, V
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Typical Noise Parameters at 25°C, V
Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Notes:
1. F
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
9
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
calculated. Refer to the noise parameter application section for more information.
the gate lead. The output reference plane is at the end of the drain lead.
min
values at 2 GHz and higher are based on measurements while the F
Mag.
0.613
0.780
0.831
0.855
0.860
0.878
0.888
0.887
0.894
0.886
0.892
0.883
0.890
0.884
0.890
0.893
0.896
0.906
0.882
0.887
0.887
0.882
0.878
0.894
0.888
0.884
0.830
0.708
0.790
F
dB
1.20
1.30
1.61
1.68
2.12
2.77
2.58
2.85
3.35
min
S
11
Ang.
‑96.9
‑131.8
‑147.2
‑156.4
‑162.0
‑166.7
‑170.2
‑172.6
‑174.5
‑177.2
175.0
168.7
162.8
157.2
146.6
137.0
127.9
119.5
105.6
96.4
84.6
72.3
62.2
52.0
42.0
34.6
24.7
11.0
‑12.7
Γ
Mag.
0.47
0.53
0.61
0.69
0.67
0.71
0.79
0.82
0.73
opt
Γ
Ang.
170.00
‑177.00
‑166.34
‑155.85
‑146.98
‑134.35
‑125.22
‑115.35
‑105.76
opt
dB
33.2
30.0
27.3
25.1
23.5
22.0
20.8
19.7
18.7
17.9
14.3
12.1
10.2
8.6
6.1
4.1
2.3
0.9
‑0.8
‑1.7
‑2.9
‑3.9
‑5.0
‑6.4
‑7.6
‑8.3
‑9.5
‑9.0
‑10.3 0.31
DS
= 4.5V, I
Mag.
45.79
31.50
23.26
18.04
14.98
12.62
10.95
9.63
8.65
7.82
5.20
4.01
3.24
2.71
2.02
1.60
1.31
1.11
0.92
0.82
0.72
0.64
0.56
0.48
0.42
0.38
0.34
0.35
S
21
R
2.8
2.6
2.7
4.0
8.4
19.0
26.7
47.2
65.2
DS
n
= 280 mA
DS
Ang.
141.7
121.6
111.0
104.1
99.7
95.6
92.8
90.0
87.9
85.4
76.3
68.4
61.5
54.5
40.6
27.6
15.4
3.7
‑9.8
‑22.2
‑33.6
‑45.8
‑57.0
‑67.8
‑76.2
‑84.3
‑92.8
‑99.5
‑93.1
= 4.5V, I
G
dB
22.8
20.1
17.3
14.4
11.6
9.9
8.8
7.5
5.7
a
DS
= 280 mA
mins
dB
‑39.5
‑36.7
‑36.2
‑35.4
‑35.2
‑35.0
‑34.6
‑34.3
‑33.7
‑33.8
‑32.8
‑31.2
‑30.0
‑28.9
‑27.0
‑25.5
‑24.2
‑22.9
‑21.3
‑20.1
‑19.3
‑18.5
‑18.0
‑17.8
‑17.3
‑16.6
‑16.1
‑15.4
‑16.4
below 2 GHz have been extrapolated. The F
-10.0
-20.0
Figure 40. MSG/MAG and |S
Frequency at 4.5V, 280 mA.
40.0
30.0
20.0
10.0
0.0
Mag.
0.011
0.015
0.015
0.017
0.017
0.018
0.019
0.019
0.021
0.020
0.023
0.027
0.032
0.036
0.045
0.053
0.061
0.071
0.086
0.098
0.109
0.119
0.126
0.130
0.137
0.147
0.156
0.169
0.152
S
0
12
MSG
5
Ang.
51.3
37.1
30.6
28.2
27.4
26.1
27.4
28.9
28.5
30.3
34.6
36.7
36.8
39.2
36.1
32.4
28.2
22.9
14.5
7.2
‑1.0
‑10.5
‑19.8
‑28.6
‑36.1
‑42.9
‑52.4
‑63.8
‑82.8
S
FREQUENCY (GHz)
21
10
MAG
21
Mag.
0.317
0.423
0.466
0.483
0.488
0.496
0.497
0.500
0.501
0.502
0.502
0.492
0.490
0.494
0.505
0.529
0.551
0.570
0.567
0.585
0.593
0.617
0.636
0.662
0.697
0.732
0.752
0.816
0.660
15
|
2
vs.
S
22
Ang.
‑108.3
‑138.5
‑152.4
‑159.9
‑163.8
‑167.0
‑169.9
‑171.7
‑173.6
‑175.7
178.8
173.6
169.8
165.7
157.8
150.3
142.9
135.5
127.3
117.8
107.3
97.1
86.0
74.7
67.5
58.7
51.9
46.1
41.2
20
min
values are based on
MSG/MAG
dB
36.2
33.2
31.9
30.3
29.5
28.5
27.6
27.0
26.1
25.9
23.5
20.2
18.5
16.2
13.8
11.9
10.4
9.6
6.8
6.2
5.0
3.9
2.8
2.1
0.9
0.3
‑1.8
‑2.2
‑4.3
min
is

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