ATF521P8 Avago Technologies US Inc., ATF521P8 Datasheet - Page 13

• Manufacturer Part Number: ATF521P8
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF521P8

• Configuration: Single Dual Source
• Drain-gate Voltage (max): -5 to 1V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Compliant

ATF-521P8 Typical Scattering Parameters, V
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Typical Noise Parameters, V
Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Notes:
1. F
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
13
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
calculated. Refer to the noise parameter application section for more information.
the gate lead. The output reference plane is at the end of the drain lead.
min
values at 2 GHz and higher are based on measurements while the F
Mag.
0.867
0.894
0.899
0.896
0.892
0.910
0.906
0.902
0.907
0.902
0.900
0.896
0.896
0.887
0.890
0.898
0.896
0.904
0.877
0.883
0.877
0.875
0.863
0.910
0.868
0.863
0.835
0.720
0.780
F
dB
0.66
0.72
0.87
1.00
1.32
1.49
1.59
1.79
1.96
min
S
11
Ang.
‑94.6
‑132.9
‑148.2
‑157.2
‑162.8
‑167.4
‑170.8
‑173.6
‑175.2
‑177.7
174.2
168.1
162.3
156.7
145.7
136.3
127.4
119.4
104.9
94.8
83.1
71.7
60.6
51.6
40.9
33.4
25.2
11.2
‑7.7
Γ
Mag.
0.22
0.30
0.42
0.59
0.63
0.72
0.74
0.78
0.70
opt
DS
= 3V, I
Γ
Ang.
147.00
160.00
‑179.94
‑163.63
‑153.81
‑135.10
‑128.97
‑117.68
‑110.04
opt
dB
33.7
29.4
26.5
24.1
22.4
20.8
19.6
18.4
17.5
16.6
13.1
10.8
9.0
7.4
4.9
3.0
1.3
‑0.2
‑1.6
‑2.4
‑3.5
‑4.4
‑5.4
‑6.5
‑7.5
‑8.1
‑9.6
‑9.5
‑11.6 0.26
DS
= 200 mA
Mag.
48.20
29.66
21.06
16.00
13.20
11.00
9.51
8.35
7.51
6.76
4.50
3.49
2.82
2.35
1.76
1.41
1.16
0.98
0.83
0.76
0.67
0.60
0.54
0.47
0.42
0.39
0.33
0.33
S
DS
21
R
2.9
2.6
1.9
1.6
3.7
10.0
15.0
25.1
29.2
= 3V, I
n
Ang.
132.4
113.2
104.4
99.1
95.6
92.3
90.2
87.8
86.3
84.2
76.4
69.1
63.0
56.9
43.8
32.1
21.6
10.3
‑2.3
‑13.0
‑26.0
‑36.3
‑47.4
‑57.9
‑62.8
‑74.7
‑78.2
‑90.8
‑92.8
DS
= 200 mA
G
dB
20.0
18.3
16.0
13.7
11.3
9.9
8.5
7.6
5.6
a
mins
dB
‑36.8
‑34.9
‑34.1
‑34.0
‑33.6
‑33.2
‑33.2
‑33.0
‑32.9
‑32.5
‑31.5
‑29.9
‑29.0
‑27.7
‑26.1
‑24.5
‑23.4
‑22.1
‑20.7
‑19.8
‑18.9
‑18.3
‑17.8
‑17.6
‑17.2
‑16.8
‑16.3
‑15.8
‑17.0
below 2 GHz have been extrapolated. The F
-10.0
-20.0
Figure 44. MSG/MAG and |S
Frequency at 3V, 200 mA.
40.0
30.0
20.0
10.0
0.0
Mag.
0.014
0.018
0.020
0.020
0.021
0.022
0.022
0.022
0.023
0.024
0.027
0.032
0.036
0.041
0.050
0.059
0.068
0.078
0.092
0.102
0.113
0.121
0.128
0.132
0.138
0.144
0.154
0.161
0.142
S
0
12
MSG
5
Ang.
45.1
28.5
23.2
23.7
24.5
22.9
23.9
24.6
27.0
26.9
32.7
32.9
34.3
35.0
32.2
28.3
23.5
17.7
9.0
1.3
‑7.3
‑16.6
‑25.1
‑33.6
‑40.4
‑47.6
‑56.8
‑67.6
‑85.1
S
FREQUENCY (GHz)
21
10
MAG
21
Mag.
0.482
0.601
0.636
0.647
0.650
0.655
0.657
0.658
0.660
0.659
0.656
0.647
0.642
0.643
0.645
0.659
0.671
0.677
0.651
0.661
0.657
0.670
0.680
0.694
0.721
0.748
0.758
0.818
0.655
15
|
2
vs.
S
22
MSG/MAG
Ang.
‑132.4
‑154.2
‑163.8
‑169.2
‑171.9
‑174.4
‑176.7
‑178.2
‑179.5
178.6
173.4
167.9
163.7
159.2
150.4
142.1
134.3
126.6
117.0
107.2
96.8
86.7
76.2
65.9
59.3
51.3
44.9
39.4
37.1
20
min
values are based on
dB
35.4
32.2
30.2
29.0
28.0
27.0
26.4
25.8
25.1
24.5
22.2
20.4
18.6
15.6
12.9
11.3
9.5
8.5
5.9
5.3
4.0
3.1
1.9
2.3
0.2
‑0.2
‑2.1
‑2.6
‑5.7
min
is