ATF521P8 Avago Technologies US Inc., ATF521P8 Datasheet - Page 4

• Manufacturer Part Number: ATF521P8
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF521P8

• Configuration: Single Dual Source
• Drain-gate Voltage (max): -5 to 1V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Compliant

RF Input
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line
tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at 4.5V, 200
mA quiesent bias:
Freq
(GHz)
0.9
2
2.4
3.9
Freq
(GHz)
0.9
2
2.4
3.9
4
1.5 pF
2.2 µF
Mag
0.413
0.368
0.318
0.463
Mag
0.587
0.614
0.649
0.552
Gamma Source
Gamma Source
Supply
Gate
12 nH
15 Ohm
1 pF
Ang (deg)
10.5
162.0
169.0
‑134.0
Ang (deg)
12.7
126.1
145.0
‑162.8
50 Ohm
.02 λ
110 Ohm
.03 λ
Mag
0.314
0.538
0.566
0.495
Mag
0.613
0.652
0.682
0.670
Gamma Load
Gamma Load
DUT
Optimum OIP3
Ang (deg)
179.0
‑176.0
‑169.0
‑159.0
Optimum P1dB
Ang (deg)
‑172.1
‑172.5
‑171.5
‑151.2
110 Ohm
.03 λ
50 Ohm
.02 λ
2.2 µF
OIP3
(dBm)
42.7
42.5
42.0
40.3
OIP3
(dBm)
39.1
39.5
40.0
38.1
Supply
Drain
1.5 pF
47 nH
3.9 nH
Gain
(dB)
16.0
15.8
14.1
9.6
Gain
(dB)
14.5
12.9
12.0
9.6
RF Output
P1dB
(dBm)
27.0
27.5
27.4
27.3
P1dB
(dBm)
29.3
29.3
29.4
27.9
PAE
(%)
54.0
55.3
53.5
43.9
PAE
(%)
49.6
49.5
46.8
39.1