AD669BR-REEL Analog Devices Inc, AD669BR-REEL Datasheet - Page 4
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AD669BR-REEL
Manufacturer Part Number
AD669BR-REEL
Description
IC DAC 16BIT MONO VREF 28-SOIC
Manufacturer
Analog Devices Inc
Series
DACPORT®r
Datasheet
1.AD669ANZ.pdf
(12 pages)
Specifications of AD669BR-REEL
Rohs Status
RoHS non-compliant
Settling Time
10µs
Number Of Bits
16
Data Interface
Parallel
Number Of Converters
1
Voltage Supply Source
Dual ±
Power Dissipation (max)
625mW
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
AD669
ESD SENSITIVITY
The AD669 features input protection circuitry consisting of large transistors and polysilicon series
resistors to dissipate both high-energy discharges (Human Body Model) and fast, low-energy pulses
(Charged Device Model). Per Method 3015.2 of MIL-STD-883: C, the AD669 has been classified
as a Class 2 device.
Proper ESD precautions are strongly recommended to avoid functional damage or performance
degradation. Charges as high as 4000 volts readily accumulate on the human body and test
equipment and discharge without detection. Unused devices must be stored in conductive foam or
shunts, and the foam should be discharged to the destination socket before devices are removed.
For further information on ESD precautions, refer to Analog Devices’ ESD Prevention Manual.
ABSOLUTE MAXIMUM RATINGS
V
V
V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to
REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5 V
Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . . 10.5 V
REF OUT, V
Power Dissipation (Any Package)
Storage Temperature . . . . . . . . . . . . . . . . . . . –65 C to +150 C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . +300 C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indi cated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
CC
EE
LL
To +60 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 mW
Derates above +60 C . . . . . . . . . . . . . . . . . . . . . .8.7 mW/ C
to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V
0.001
0.01
0.1
OUT
10
1
–50
. . . . . . Indefinite Short To AGND, DGND,
Model
AD669AN
AD669AR
AD669BN
AD669BR
AD669AQ
AD669BQ
AD669SQ
AD669/883B**
** N = Plastic DIP; Q = Cerdip; R = SOIC.
** Refer to AD669/883B military data sheet.
THD+N vs. Temperature
–25
0
TEMPERATURE – C
25
Temperature
Range
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–55 C to +125 C
–55 C to +125 C **
50
*
75
–20dB
V
–60dB
0dB
100
CC
, V
125
EE
, and V
ORDERING GUIDE
+7.0 V
Linearity
Error Max
T
4 LSB
4 LSB
2 LSB
2 LSB
4 LSB
2 LSB
4 LSB
MIN
1 V
LL
–T
–4–
MAX
Gain
TC max
ppm/ C
25
25
15
15
15
15
15
**
0.001
DGND
DB15
DB14
DB13
DB12
DB11
DB10
0.01
V
V
DB9
DB8
0.1
V
10
EE
CS
CC
L1
LL
1
Package
Description
Plastic DIP
SOIC
Plastic DIP
SOIC
Cerdip
Cerdip
Cerdip
**
10
11
12
13
14
1
2
3
4
5
6
7
8
9
PIN CONFIGURATION
THD+N vs. Frequency
100
(Not to Scale)
TOP VIEW
AD669
FREQUENCY – Hz
1000
WARNING!
Package
Option*
N-28
R-28
N-28
R-28
Q-28
Q-28
Q-28
**
28
27
26
25
24
23
22
21
20
19
18
17
16
15
LDAC
DB1
DB3
REF OUT
REF IN
SPAN/BIP
OFFSET
V
AGND
DB0
DB2
DB4
DB5
DB6
DB7
–20dB
OUT
ESD SENSITIVE DEVICE
0dB
10000
–60dB
REV. A