SST39WF1601-70-4C-Y1QE Microchip Technology, SST39WF1601-70-4C-Y1QE Datasheet - Page 21

• Manufacturer Part Number: SST39WF1601-70-4C-Y1QE
• Description: 1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm TRAY
• Manufacturer: Microchip Technology
• Series: -r

Specifications of SST39WF1601-70-4C-Y1QE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-WFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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©2011 Silicon Storage Technology, Inc.
Figure 10:WE# Controlled Block-Erase Timing Diagram
Figure 11:WE# Controlled Sector-Erase Timing Diagram
ADDRESS A
ADDRESS A
Note: This device also supports CE# controlled Sector-Erase operation.
Note: This device also supports CE# controlled Block-Erase operation.
DQ
The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 17.)
SA
WP# must be held in proper logic state (V
X can be V
The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 17.)
BA
WP# must be held in proper logic state (V
X can be V
DQ
WE#
OE#
CE#
19-0
15-0
WE#
X
X
OE#
CE#
19-0
15-0
= Sector Address
= Block Address
IL
IL
or V
or V
5555
5555
IH,
IH,
XXAA
XXAA
T
T
SW0
SW0
but no other value.
but no other value.
WP
WP
2AAA
2AAA
XX55
XX55
SW1
SW1
SIX-BYTE CODE FOR SECTOR-ERASE
SIX-BYTE CODE FOR BLOCK-ERASE
16 Mbit Multi-Purpose Flash Plus
5555
5555
21
XX80
XX80
SW2
SW2
IH
IH
) 1 µs prior to and 1µs after the command sequence.
) 1 µs prior to and 1 µs after the command sequence.
5555
5555
SST39WF1601 / SST39WF1602
XXAA
XXAA
SW3
SW3
2AAA
2AAA
XX55
XX55
SW4
SW4
BA
SA
X
X
XX50
XX30
SW5
SW5
T
T
BE
SE
DS-25014A
Data Sheet
1297 F10.1
1297 F09.1
04/11