SST39WF1601-70-4C-Y1QE Microchip Technology, SST39WF1601-70-4C-Y1QE Datasheet - Page 2

• Manufacturer Part Number: SST39WF1601-70-4C-Y1QE
• Description: 1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm TRAY
• Manufacturer: Microchip Technology
• Series: -r

Specifications of SST39WF1601-70-4C-Y1QE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-WFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Product Description
The SST39WF1601/1602 devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured
with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
approaches. The SST39WF1601/1602 write (Program or Erase) with a 1.65-1.95V power supply.
These devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39WF1601/1602 devices provide a typical Word-
Program time of 28 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of
Program operation. To protect against inadvertent write, they have on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is
rated at greater than 100 years.
The SST39WF1601/1602 devices are suited for applications that require convenient and economical
updating of program, configuration, or data memory. For all system applications, they significantly
improve performance and reliability, while lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39WF1601/1602 are offered in both 48-ball
TFBGA and 48-ball WFBGA packages. See Figures 2 and 3 for pin assignments.
16 Mbit Multi-Purpose Flash Plus
2
SST39WF1601 / SST39WF1602
DS-25014A
Data Sheet
04/11