M48T512Y-70PM1 STMicroelectronics, M48T512Y-70PM1 Datasheet - Page 3

IC TIMEKPR NVRAM 4MBIT 5V 32-DIP

M48T512Y-70PM1

Manufacturer Part Number
M48T512Y-70PM1
Description
IC TIMEKPR NVRAM 4MBIT 5V 32-DIP
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheets

Specifications of M48T512Y-70PM1

Memory Size
4M (512K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
32-DIP (600 mil) Module
Clock Format
BCD
Clock Ic Type
Timekeeper
Memory Configuration
512K X 8
Supply Voltage Range
4.5V To 5.5V
Digital Ic Case Style
DIP
No. Of Pins
32
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes
Nvram Features
RTC, Internal Battery, XTAL
Access Time
70ns
Memory Case Style
DIP
Bus Type
Parallel
User Ram
512KB
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temperature Classification
Commercial
Operating Temperature (max)
70C
Operating Temperature (min)
0C
Pin Count
32
Mounting
Through Hole
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2856-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48T512Y-70PM1
Manufacturer:
NIPPON
Quantity:
34 000
Part Number:
M48T512Y-70PM1
Manufacturer:
ST
0
Part Number:
M48T512Y-70PM1L
Manufacturer:
ST
0
Table 3. Operating Modes
Note: 1. X = V
cess Time (t
nal is stable, providing the E and G access times
are also satisfied. If the E and G access times are
not met, valid data will be available after the latter
of the Chip Enable Access Times (t
Enable Access Time (t
three-state Data I/O signals is controlled by E and
G. If the outputs are activated before t
data lines will be driven to an indeterminate state
until t
while E and G remain active, output data will re-
main valid for Output Data Hold Time (t
will go indeterminate until the next Address Ac-
cess.
WRITE MODE
The M48T512Y/V is in the Write Mode whenever
W (Write Enable) and E (Chip Enable) are low
state after the address inputs are stable. The start
of a write is referenced from the latter occurring
falling edge of W or E. A write is terminated by the
earlier rising edge of W or E. The addresses must
be held valid throughout the cycle. E or W must re-
turn high for a minimum of t
or t
another read or write cycle. Data-in must be valid
t
t
write cycles to avoid bus contention; although, if
the output bus has been activated by a low on E
and G a low on W will disable the outputs t
ter W falls.
DVWH
WHDX
Deselect
Write
Read
Read
Deselect
Deselect
WHAX
Mode
2. See Table 7 for details.
AVQV
prior to the end of write and remain valid for
afterward. G should be kept high during
from Write Enable prior to the initiation of
. If the Address Inputs are changed
IH
AVQV
or V
IL
V
) after the last address input sig-
.
SO
4.5V to 5.5V
3.0V to 3.6V
to V
GLQV
V
V
PFD
or
SO
CC
EHAX
). The state of the eight
(2)
(1)
(min)
from Chip Enable
(2)
ELQV
) or Output
AVQV
AXQX
WLQZ
V
V
V
V
E
X
X
IH
IL
IL
IL
, the
) but
af-
V
V
G
X
X
X
X
IH
IL
Table 4. AC Measurement Conditions
Note that Output Hi-Z is defined as the point where data is no longer
driven.
Figure 3. AC Testing Load Circuit
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
C L includes JIG capacitance
DEVICE
UNDER
TEST
V
V
V
W
X
X
X
IH
IH
IL
DQ0-DQ7
High Z
High Z
High Z
High Z
D
D
OUT
IN
M48T512Y, M48T512V
C L = 100pF
650
Battery Back-up Mode
CMOS Standby
Standby
Power
Active
Active
Active
0 to 3V
AI01803C
1.5V
5ns
1.75V
3/14

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