M48T08-150PC1 STMicroelectronics, M48T08-150PC1 Datasheet - Page 22
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M48T08-150PC1
Manufacturer Part Number
M48T08-150PC1
Description
IC TIMEKPR NVRAM 64KBIT 5V 28-DI
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Specifications of M48T08-150PC1
Memory Size
64K (8K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.75 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
28-DIP Module (600 mil), 28-EDIP
Function
Clock/Calendar/NV Timekeeping RAM/Battery Backup
Rtc Memory Size
8192 Byte
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.75 V
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Rtc Bus Interface
Parallel
Capacitance, Input
10 pF
Capacitance, Output
10 pF
Current, Input, Leakage
±1 μA
Current, Operating
80 mA
Current, Output, Leakage
±1
Data Retention
10 yrs.
Density
64K
Memory Type
Non-Volatile SRAM
Organization
8K×8
Package Type
PCDIP28
Power Dissipation
1 W
Temperature, Operating
0 to +70 °C
Time, Access
150 ns
Time, Fall
≤5 ns
Time, Rise
≤5 ns
Voltage, Input, High
5.05 to 5.8 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
4.75 to 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2829-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M48T08-150PC1
Manufacturer:
ST
Quantity:
120
Part Number:
M48T08-150PC1
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
22/31
Table 10.
1. Valid for ambient operating temperature: T
2. V
3. V
Table 11.
1. All voltages referenced to V
2. Valid for ambient operating temperature: T
3. At 55 °C, V
Symbol
Symbol
V
noted).
until 200 µs after V
noted).
using the SOH28 package.
V
t
t
t
t
t
FB
PFD
PFD
PFD
DR
t
t
t
PFX
PFH
SO
F
PD
t
RB
rec
(2)
R
(3)
(min) to V
(max) to V
Power-fail deselect voltage
Battery backup switchover voltage
Expected data retention time
CC
Power down/up AC characteristics
Power down/up trip points DC characteristics
E1 or W at V
V
V
V
V
E1 or W at V
INT low to auto deselect
V
PFD
PFD
PFD
SS
PFD
= 0 V; t
SS
PFD
to V
fall time of less than t
(min) to V
(max) to V
(min) to V
(max) to INT high
CC
(min) fall time of less than t
DR
PFD
passes V
= 8.5 years (typ) at 70 °C. Requires use of M4T32-BR12SH SNAPHAT
IH
(min) V
IH
SS
Parameter
or E2 at V
or E2 at V
PFD
SS
.
PFD
PFD
Parameter
V
Doc ID 2411 Rev 10
(max) V
CC
CC
(min) V
(min).
fall time
rise time
FB
(1)(2)
IL
IL
A
A
may cause corruption of RAM data.
before power-up
before power-down
CC
CC
= 0 to 70 °C; V
= 0 to 70 °C; V
(1)
M48T08
M48T18/T08Y
rise time
fall time
F
may result in deselection/write protection not occurring
CC
CC
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
10
Min
4.5
4.2
(3)
M48T08, M48T08Y, M48T18
Min
300
10
10
0
0
1
1
Typ
4.6
4.3
3.0
Max
120
40
4.75
Max
4.5
®
top when
Unit
Years
ms
Unit
µs
µs
µs
µs
µs
µs
µs
V
V
V