M48T08-150PC1 STMicroelectronics, M48T08-150PC1 Datasheet
M48T08-150PC1
Specifications of M48T08-150PC1
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M48T08-150PC1 Summary of contents
Page 1
... BCD coded year, month, day, date, hours, minutes, and seconds ■ Typical clock accuracy of ±1 minute a month, at 25°C ■ Automatic power-fail chip deselect and write protection ■ Write protect V = Power-fail deselect voltage): PFD – M48T08 4. 4.75 V PFD – M48T18/T08Y 4 4.5 V PFD ■ ...
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... PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28-pin, 600 mil DIP CAPHAT™ houses the M48T08/18/08Y silicon with a quartz crystal and a long-life lithium button cell in a single package. The 28-pin, 330 mil SOIC provides sockets with gold plated contacts at both ends for direct ...
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... Write mode The M48T08/18/08Y is in the WRITE mode whenever W, E1, and E2 are active. The start of a WRITE is referenced from the latter occurring falling edge E1, or the rising edge of E2. A WRITE is terminated by the earlier rising edge E1, or the falling edge of E2. ...
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... V = 4. 4.5 to 5.5 V (except where noted falls within the V CC PFD . The M48T08/18/08Y may respond to transient noise spikes on V M48T08, M48T08Y, M48T18 M48T08/M48T18/T08Y –150/–15 (T08Y) Min Max Min Max 100 150 0 ...
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... M48T08, M48T08Y, M48T18 4 Maximum ratings Stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied ...
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... Effective capacitance measured with power supply sampled only, not 100% tested 25° MHz. 3. Outputs deselected. 20/31 M48T08 ) 4. 100 1.5 DEVICE UNDER TEST includes JIG capacitance (1)(2) Parameter M48T08, M48T08Y, M48T18 M48T18/T08Y 4 100 1.5 5V 1.8k OUT 100pF AI01019 Min Max 10 10 Unit V ° ...
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... M48T08, M48T08Y, M48T18 Table 9. DC characteristics Symbol Parameter I Input leakage current LI (2) I Output leakage current LO I Supply current CC (3) I Supply current (standby) TTL CC1 (3) I Supply current (standby) CMOS CC2 V Input low voltage IL V Input high voltage IH Output low voltage V OL ...
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... CC PFD fall time of less than t may cause corruption of RAM data. FB (1)(2) Parameter M48T08 M48T18/T08Y . 70° 8.5 years (typ) at 70°C. Requires use of M4T32-BR12SH SNAPHAT DR M48T08, M48T08Y, M48T18 Min Max 0 300 120 = 4. 4.5 to 5.5 V (except where CC Min Typ Max 4 ...
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... M48T08, M48T08Y, M48T18 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Figure 13. PCDIP28 – 28-pin plastic DIP, battery CAPHAT™, package outline Note: Drawing is not to scale ...
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... TR = Tape & reel (not for new design - use F) For PCDIP28: ® blank = ECOPACK 1. The M48T08/18 part is offered with the PCDIP28 (e.g., CAPHAT™) package only. 2. The SOIC package (SOH28) requires the SNAPHAT under the part number “M4TXX-BR12SH” in plastic tube or “M4TXX-BR12SHTR” in tape & reel form (see Table 17) ...